H01J63/06

Transition radiation light sources

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

A FIELD EMISSION CATHODE STRUCTURE FOR A FIELD EMISSION ARRANGEMENT

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

Transition radiation light sources

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

Transition radiation light sources

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.

IMAGE DISPLAY

A display has a screen which incorporates a light modulator. The screen may be a front projection screen or a rear-projection screen. The screen is illuminated with light from a light source comprising an array of controllable light-emitters. The controllable-emitters and elements of the light modulator may be controlled to adjust the intensity of light emanating from corresponding areas on the screen. The display may provide a high dynamic range.

IMAGE DISPLAY

A display has a screen which incorporates a light modulator. The screen may be a front projection screen or a rear-projection screen. The screen is illuminated with light from a light source comprising an array of controllable light-emitters. The controllable-emitters and elements of the light modulator may be controlled to adjust the intensity of light emanating from corresponding areas on the screen. The display may provide a high dynamic range.

Ultraviolet light generation target, method for manufacturing ultraviolet light generation target, and electron-beam-excited ultraviolet light source
11887837 · 2024-01-30 · ·

An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO.sub.4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

Ultraviolet light generation target, method for manufacturing ultraviolet light generation target, and electron-beam-excited ultraviolet light source
11887837 · 2024-01-30 · ·

An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO.sub.4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

Method for manufacturing nanostructures for a field emission cathode

The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode.

Method for manufacturing nanostructures for a field emission cathode

The present invention relates to the field of field emission lighting, and specifically to a method for forming a field emission cathode. The method comprises arranging a growth substrate in a growth solution comprising a Zn-based growth agent, the growth solution having a pre-defined pH-value at room temperature; increasing the pH value of the growth solution to reach a nucleation phase; upon increasing the pH of the solution nucleation starts. The growth phase is then entered by decreasing the pH. The length of the nanorods is determined by the growth time. The process is terminated by increasing the pH to form sharp tips. The invention also relates to a structure for such a field emission cathode and to a lighting arrangement comprising the field emission cathode.