A light emitting sealed body includes: a housing containing light-emitting gas in an internal space; a first window portion provided to the housing and on which first light that is laser light for maintaining a plasma generated in the light-emitting gas is incident; and a second window portion provided to the housing and from which second light that is light from the plasma is emitted. The second window portion includes a second window member made of a material containing diamond. A protective layer made of an inorganic material is formed at least on a surface of the second window member on a side of the internal space.

A light emitting sealed body includes: a housing containing light-emitting gas in an internal space; a first window portion provided to the housing and on which first light that is laser light for maintaining a plasma generated in the light-emitting gas is incident; and a second window portion provided to the housing and from which second light that is light from the plasma is emitted. The second window portion includes a second window member made of a material containing diamond. A protective layer made of an inorganic material is formed at least on a surface of the second window member on a side of the internal space.

A light source with radiating plasma sustained in the gas-filled chamber by a focused beam of CW laser. The gas is inert gas with a purity of at least 99.99%. The chamber contains a metal housing with at least one window made of MgF.sub.2 for outputting a plasma radiation. Each window is located in a hole of the housing on the end of a sleeve and is soldered to the sleeve by means of glass cement, and each sleeve is welded to the hole of the metal housing on the outside seam. The sleeves and the housing are made of an alloy with a coefficient of linear thermal expansion (CLTE), matched with the CLTE of the MgF.sub.2 crystal in the direction perpendicular to the optical axis of the MgF.sub.2 crystal. The technical result consists in expanding the radiation spectrum of the light source into the VUV region.

In electrodeless HID lamps the radio frequency (RF) source is separated from a lamp housing in which vessel containing plasma arc is mounted. This lamp housing is usually designed to maximize the amount of RF energy incident on the plasma arc. The plasma arc, however, cannot convert the entire amount of incident RF energy into light and a portion instead is released as propagating radiation or remains localized RF electromagnetic fields in the vicinity of lamp. In this invention, we introduce field suppression probes: Small, configurable structures that are made of conductive materials that mount directly to the lamp housing or alternately the lamp fixture that is able to suppress unused RF energy that is emanated from the lamp housing or plasma. These probes, when configured with the lamp, can substantially suppress the unused RF energy and prevent EMI emissions and reduce RF feedback that can adversely affect the lamp.

To improve startability in a UV irradiation apparatus equipped with excimer lamps. The UV irradiation apparatus includes a plurality of excimer lamps each having a light-emitting tube filled with a discharge gas containing a noble gas. The plurality of excimer lamps includes a first excimer lamp filled with the discharge gas at a first enclosed gas pressure and a second excimer lamp filled with the discharge gas at a second enclosed gas pressure lower than the first enclosed gas pressure. The first excimer lamp is placed in a position such that at least part of light emitted from the second excimer lamp is allowed to enter the first excimer lamp.

Reduction of solar wafer LID by exposure to continuous or intermittent High-Intensity full-spectrum Light Radiation, HILR, by an Enhanced Light Source, ELS, producing 3-10 Sols, optionally in the presence of forming gas or/and heating to within the range of from 100° C.-300° C. HILR is provided by ELS modules for stand-alone bulk/continuous processing, or integrated in wafer processing lines in a High-Intensity Light Zone, HILZ, downstream of a wafer firing furnace. A finger drive wafer transport provides continuous shadowless processing speeds of 200-400 inches/minute in the integrated furnace/HILZ. Wafer dwell time in the peak-firing zone is 1-2 seconds. Wafers are immediately cooled from peak firing temperature of 850° C.-1050° C. in a quench zone ahead of the HILZ-ELS modules. Dwell in the HILZ is from about 10 sec to 5 minutes, preferably 10-180 seconds. Intermittent HILR exposure is produced by electronic control, a mask, rotating slotted plate or moving belt.

A light source with radiating plasma sustained in the gas-filled chamber by a focused beam of CW laser. The gas is inert gas with a purity of at least 99.99%. The chamber contains a metal housing with at least one window made of MgF.sub.2 for outputting a plasma radiation. Each window is located in a hole of the housing on the end of a sleeve and is soldered to the sleeve by means of glass cement, and each sleeve is welded to the hole of the metal housing on the outside seam. The sleeves and the housing are made of an alloy with a coefficient of linear thermal expansion (CLTE), matched with the CLTE of the MgF.sub.2 crystal in the direction perpendicular to the optical axis of the MgF.sub.2 crystal. The technical result consists in expanding the radiation spectrum of the light source into the VUV region.

Electrodeless high intensity discharge lamps have the promise of higher reliability and higher efficiency than traditional electroded high intensity discharge lamps. However most electrodeless HIDs operate in the frequency range of around 400 MHz to 2.5 GHz resulting in expensive, inefficient RF drivers that reduce the overall efficacy of the lamp. Operating the lamp at lower frequencies results in substantial increase in the size of the resonators used in traditional electrodeless HIDs. In this invention a novel design is used to lower the operating frequency of the resonator without increasing the size of the resonator. This provides an avenue to increase the conversion efficiency of the RF driver and the efficacy of the lamp system.

A method and apparatus for a sealed high intensity illumination device are disclosed. The device is configured to receive a laser beam from a laser light source. The device has a sealed chamber configured to contain an ionizable medium. The chamber has a substantially flat ingress window disposed within a wall of the integral reflective chamber interior surface configured to admit the laser beam into the chamber, a plasma sustaining region, a plasma ignition region, and a high intensity light egress window configured to emit high intensity light from the chamber. The chamber has an integral reflective chamber interior surface configured to reflect high intensity light from the plasma sustaining region to the egress window. There is a direct path of the laser beam from the laser light source through the lens and ingress window to the lens focal region.

A method and apparatus for a sealed high intensity illumination device are disclosed. The device is configured to receive a laser beam from a laser light source. The device has a sealed chamber configured to contain an ionizable medium. The chamber has a substantially flat ingress window disposed within a wall of the integral reflective chamber interior surface configured to admit the laser beam into the chamber, a plasma sustaining region, a plasma ignition region, and a high intensity light egress window configured to emit high intensity light from the chamber. The chamber has an integral reflective chamber interior surface configured to reflect high intensity light from the plasma sustaining region to the egress window. There is a direct path of the laser beam from the laser light source through the lens and ingress window to the lens focal region.