A plasma processing apparatus includes an electrostatic chuck, a connection surface being provided at a periphery of the electrostatic chuck; an edge adjustment ring, arranged around the electrostatic chuck in a circumferential direction, an inner wall of the edge adjustment ring being opposite to an outer wall of the electrostatic chuck; and an edge ring, arranged around the electrostatic chuck and above the connection surface, and located above the edge adjustment ring. The edge adjustment ring includes an annular body and an annular protrusion protruding toward the edge ring, and the annular body is relatively close to the electrostatic chuck.

A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.

An apparatus for atomic scale processing is provided. The apparatus may include a reactor and an inductively coupled plasma source. The reactor may have inner and outer surfaces such that a portion of the inner surfaces define an internal volume of the reactor. The internal volume of the reactor may contain a fixture assembly to support a substrate wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.

A disclosed substrate support includes a base and first and second supports. A refrigerant flow path is formed inside the base. The base has first to third regions. The first region has a circular upper surface. The second region surrounds the first region. The third region surrounds the second region. The upper surface of the first region, the upper surface of the second region, and the upper surface of the third region are flat and continuous. The first support is provided on the first region and is configured to support the substrate placed thereon. The second support is provided on the third region to surround the first support, is configured to support the edge ring placed thereon, and is separated from the first support.

Provided is a sample loading method of loading a cooled sample into a sample exchange chamber of a charged particle beam apparatus includes: attaching the sample container in which a sample and liquid nitrogen are accommodated to the sample exchange chamber via a gate valve; evacuating a space between a liquid surface of the liquid nitrogen and the gate valve in a state in which the gate valve is closed; discharging the liquid nitrogen in the sample container after the space between the liquid surface of the liquid nitrogen and the gate valve has been evacuated; evacuating a space in the sample container after the liquid nitrogen in the sample container has been discharged; and opening the gate valve after the space in the sample container has been evacuated.

A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.

Provided in an active gas generation apparatus according to the present disclosure is a gas separation structure of separating a gas flow between an in-housing space and a discharge space by a cooling plate, an electrode holding member, and a high voltage apply electrode part. The active gas generation apparatus further includes an auxiliary metal electrode provided on an upper surface of an electrode dielectric film in the high voltage apply electrode part. The auxiliary metal electrode is provided to overlap with part of an active gas transmission path in a plan view, and set to ground potential.

The invention relates to a device (100) for reducing ice contamination of a sample (S) in a chamber (210) of a focused ion beam milling apparatus (200), wherein the device (100) comprises a body (110) configured to be cooled to cryogenic temperatures, wherein the body (110) comprises an aperture (111), which is configured such that an ion beam (I) generated by an ion source (220) can pass from the ion source (220) through the aperture (111) to the sample (S), wherein the body (110) comprises a recess (112), wherein said aperture (111) is arranged in the recess (112).

The invention further relates to a focused ion beam milling apparatus (200) and a method for focused ion beam milling of a sample (S).