An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Improved is the reliability of sample analysis performed using a charged particle beam apparatus.

The charged particle beam apparatus includes region setting means for setting an irradiation region for irradiating a sample with an electron beam and an irradiation prohibited region for prohibiting the irradiation of the sample with the electron beam using a low-magnification image of the sample captured under low vacuum. In addition, the charged particle beam apparatus includes captured image acquisition means for selectively irradiating the irradiation region with the electron beam with the inside of a sample chamber under high-vacuum and acquiring a high-vacuum SEM image of the irradiation region based on the secondary or backscattered electrons emitted from the irradiation region.

A multiple particle beam system with a mirror mode of operation, a method for operating a multiple particle beam system with a mirror mode of operation and an associated computer program product are disclosed. The multiple particle beam system can be operated in different mirror modes of operation which allow the multiple particle beam system to be inspected and recalibrated thoroughly. A detection system configured to operate in a first detection mode and/or in a second detection mode is used for the analysis.

A chicane blanker assembly for a charged particle beam system includes an entrance and an exit, at least one neutrals blocking structure, a plurality of chicane deflectors, a beam blanking deflector, and a beam blocking structure. The entrance is configured to accept a beam of charged particles propagating along an axis. The at least one neutrals blocking structure intersects the axis. The plurality of chicane deflectors includes a first chicane deflector, a second chicane deflector, a third chicane deflector, and a fourth chicane deflector sequentially arranged in series between the entrance and the exit and configured to deflect the beam along a path that bypasses the neutrals blocking structure and exits the chicane blanker assembly through the exit. In embodiments, the chicane blanker assembly includes a two neutrals blocking structures. In embodiments, the beam blocking structure is arranged between the third chicane deflector and the fourth chicane deflector.

A frame member for an electron beam lithography device of the present disclosure includes a frame body comprising sapphire or aluminum oxide-based ceramics having an open porosity of 0.2% or less and a conductive film disposed at least on a main surface of an electron gun side of the frame body.

A plasma processing apparatus configured to perform plasma processing on a conductive workpiece having a flat plate shape includes: a conductive vacuum chamber having a recessed portion which is configured to cause a processing object portion of at least one side of the workpiece having a flat plate shape to be disposed in the recessed portion and a peripheral edge portion which is provided outside the recessed portion to be continuous with the recessed portion; a holding member configured to hold the workpiece to be separated and insulated from the peripheral edge portion; a voltage application unit configured to apply a voltage between the workpiece and the vacuum chamber; and an insulating layer configured to cover a portion of the peripheral edge portion facing the workpiece.

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.

An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence. The improved charged particle beam apparatus may further include a controller configured to sample multiple images of the area of the wafer at difference times over the time sequence. The multiple images may be compared to detect a voltage contrast difference or changes to identify a thin device structure defect.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold.