The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.

An ion source for extracting a ribbon ion beam with improved height uniformity is disclosed. Gas nozzles are disposed in the chamber proximate the extraction aperture. The gas that is introduced near the extraction aperture serves to shape the ribbon ion beam as it is being extracted. For example, the height of the ribbon ion beam may be reduced by injecting gas above and below the ion beam so as to compress the extracted ion beam in the height direction. In some embodiments, the feedgas is introduced near the extraction aperture. In other embodiments, a shield gas, such as an inert gas, is introduced near the extraction aperture.

A method for attaching a prepared sample to a carrier in a focused ion beam chamber. The method includes reducing a temperature within the chamber to substantially below room temperature followed by moving the prepared sample adjacent to a substrate carrier surface. The temperature can be lowered sufficiently to establish a cryogenic condition in the chamber. Attachment of the prepared sample to the substrate carrier is done by controlling the focused ion beam to raster a target area of the surface in the absence of a gas deposition precursor, to sputter material onto the base of the sample and the substrate carrier surface, thereby binding the prepared sample to the substrate carrier.

An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

The present invention encompasses a method of repairing a defect on a lithography mask, comprising the following steps: (a.) directing a particle beam onto the defect to induce a local etching operation on the defect; (b.) monitoring the etching operation using backscattered particles and/or secondary particles and/or another free-space signal generated by the etching operation, in order to detect a transition from the local etching operation on the defect to a local etching operation on an element of the mask beneath the defect, and (c.) feeding in at least one contrast gas in order to increase contrast in the detection of the transition.

A method of processing a region of a sample, the method comprising: positioning a sample within a vacuum chamber; generating an ion beam with a focused ion beam (FIB) column; focusing the ion beam on the sample and scanning the focused ion beam across the region of the sample thereby generating secondary electrons that are ejected from a surface of the sample within the region; and during the scanning, applying a negative bias voltage to an electrically conductive structure proximate the region to alter a trajectory of the secondary electrons and repel the secondary electrons back to the sample surface, wherein the electrically conductive structure is one of a gas injection nozzle, a voltage pin or a nano-manipulator.

The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF.sub.4) and hydrogen (H.sub.2) gases to an ion implantation apparatus, so H.sub.2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF.sub.4 and H.sub.2 are present in a volume ratio (GeF.sub.4:H.sub.2) in the range of 3:1 to 33:67. The use of the H.sub.2 gas in an amount in mixture or relative to the GeF.sub.4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge.sup.+ current gain and W.sup.+ peak reduction during au ion implantation procedure.

A method of reducing gallium particle formation in an ion implanter. The method may include performing a gallium implant process in the ion implanter, the gallium implant process comprising implanting a first dose of gallium ions from a gallium ion beam into a first set of substrates, while the first set of substrates are disposed in a process chamber of the beamline ion implanter. As such, a metallic gallium material may be deposited on one or more surfaces within a downstream portion of the ion implanter. The method may include performing a reactive gas bleed operation into at least one location of the downstream portion of the ion implanter, the reactive bleed operation comprising providing a reactive gas through a gas injection assembly, wherein the metallic gallium material is altered by reaction with the reactive gas.