A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.

A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.

A height measuring device includes a light source that emits light in a direction oblique to a top surface of a specimen, a slit that shapes the light from the light source to form a slit image on the specimen, an imaging element that detects reflected light reflected by the specimen, and an arithmetic unit. The arithmetic unit: identifies a slit image of the reflected light reflected by the top surface of the specimen from among a plurality of slit images based on respective positions of the plurality of slit images on a detection surface of the imaging element; and determines the height of the top surface of the specimen based on the position of the slit image of the reflected light reflected by the top surface of the specimen on the detection surface.

The invention relates to an image capture assembly and method for use in an electron backscatter diffraction (EBSD) system. An image capture assembly comprises a scintillation screen (10) including a predefined screen region (11), an image sensor (20) comprising an array of photo sensors and a lens assembly (30). The image capture assembly is configured to operate in at least a first configuration or a second configuration. In the first configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto the array and in the second configuration the lens assembly (30) projects the predefined region (11) of the scintillation screen (10) onto a sub-region (21) of the array. In each of the first and second configurations the field of view of the lens assembly (30) is the same.

A corrector structure and a method for correcting aberration of an annular focused charged-particle beam, the corrector structure comprising a plurality of lenses configured for reducing second-order geometric aberration in the charged-particle beam.

One embodiment relates to a method of automated inspection of scattered hot spot areas on a manufactured substrate using an electron beam apparatus. A stage holding the substrate is moved along a swath path so as to move a field of view of the electron beam apparatus such that the moving field of view covers a target area on the substrate. Off-axis imaging of the hot spot areas within the moving field of view is performed. A number of hot spot areas within the moving field of view may be determined, and the speed of the stage movement may be adjusted based on the number of hot spot areas within the moving field of view. Another embodiment relates to an electron beam apparatus for inspecting scattered areas on a manufactured substrate. Other embodiments, aspects and features are also disclosed.

An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

Provided is a charged particle beam apparatus which includes a charged particle source, a sample table on which a sample is placed, a charged particle beam optical system that includes an objective lens and emits a charged particle beam emitted from the charged particle source onto the sample, a plurality of detectors which detect secondary particles emitted from the sample when being irradiated with the charged particle beam, and a rotation member which magnetically, electrically, or mechanically changes a detected azimuth angle of the secondary particles emitted from the sample.

Disclosed herein is a manipulator or an array of manipulator. A manipulator manipulates a charged particle beam in a projection system. The manipulator comprising a substrate with major surfaces and a through-passage between associated apertures in the major surfaces. The through passage configured for passage of a path of a charged particle beam. An inner wall of the through-passage between the major surfaces comprises a plurality of electrodes configured to manipulate the charged particle beam. Each electrode comprises doped substrate. The through-passage comprises recesses that extend away from the path of the charged particle beam. Each recess defines a gap between the adjacent electrodes and further comprising an electrically insulating region between the adjacent electrodes. The recesses extend behind at least one of the adjacent electrodes relative to the path of the charged particle beam and comprising at least part of the electrically insulating region.

Embodiments comprise a system created through fabricating a lens array through which lasers are emitted. The lens array may be fabricated in the semiconductor substrate used for fabricating the lasers or may be a separate substrate of other transparent material that would be aligned to the lasers. In some embodiments, more lenses may be produced than will eventually be used by the lasers. The inner portion of the substrate may be formed with the lenses that will be used for emitting lasers, and the outer portion of the substrate may be formed with lenses that will not be used for emitting lasersrather, through etching these additional lenses, the inner lenses may be created with a higher quality.