A multi charged particle beam irradiation apparatus includes a shaping aperture array substrate, where plural openings are formed as an aperture array, to shape multi-beams by making a region including entire plural openings irradiated by a charged particle beam, and making portions of a charged particle beam individually pass through a corresponding one of the plural openings; and a plurality of stages of lenses, arranged such that a reduction ratio of multi-beams by at least one lens of a stage before the last stage lens is larger than that of the multi-beams by the last stage lens, to correct distortion of a formed image obtained by forming an image of the aperture array by the multi-beams, and to form the image of the aperture array by the multi-beams at a height position between the last stage lens and a last-but-one stage lens, and at the surface of a target object.

In one embodiment, a multi charged particle beam writing apparatus includes an emitter that emits a charged particle beam, an aperture plate in which a plurality of openings are formed and that forms multiple beams by allowing the charged particle beam to pass through the plurality of openings, a blanking plate provided with a plurality of blankers that each perform blanking deflection on a corresponding beam included in the multiple beams, a stage on which a substrate irradiated with the multiple beams, a detector that detects a reflection charged particle from the substrate, feature amount calculation circuitry that calculates a feature amount of an aperture image based on a detection value of the detector, and aberration correction circuitry that corrects aberration of the charged particle beam based on the feature amount.

Provided is a method for adjusting a field-of-view of a charged particle microscope device, in which reference data for a sample is set, a plurality of regions of interest are set for the reference data, a rough sampling coordinate group is set for each of the plurality of regions of interest, the sample is irradiated with charged particles based on the sampling coordinate group to obtain a corresponding pixel value group, a plurality of reconstructed images corresponding to the plurality of regions of interest are generated based on the pixel value group, a correspondence relationship among the plurality of regions of interest is estimated based on the plurality of reconstructed images, and the plurality of regions of interest are adjusted based on the correspondence relationship. Here, the sampling coordinate group is set based on the reference data.

A scanning electron microscopy system for mitigating charging artifacts includes a scanning electron microscopy sub-system for acquiring multiple images from a sample. The images include one or more sets of complementary images. The one or more sets of complementary images include a first image acquired along a first scan direction and a second image acquired along a second scan direction opposite to the first scan direction. The system includes a controller communicatively coupled to the scanning electron microscopy sub-system. The controller is configured to receive images of the sample from the scanning electron microscopy sub-system. The controller is further configured to generate a composite image by combining the one or more sets of complementary images.

The present disclosure provides a method for detecting signal charged particles in a charged particle beam device. The method includes emitting a primary charged particle beam, illuminating a specimen with the primary charged particle beam, wherein the primary charged particle beam has a landing energy on the specimen of less than 40 keV, wherein signal charged particles with a first energy spectrum are generated, energy filtering the signal charged particles such that signal charged particles in an energy range from an energy of 85% of the landing energy to 100% propagate for subsequent detection, and detecting the signal charged particles within the energy range using at least one detector.

Disclosed herein is a proximity effect correction method based on shape adjustment for fabricating an imaging structure. The imaging structure comprises a bottom layer arranged on a substrate, and a top layer arranged on the upper surface of the bottom layer. The position of a surrounding frame of the top layer is closed to an edge of the bottom layer, which has a width value and a space value between the top and bottom layers. Additionally, the method combines with the use of increased particle beam sizes to improve the throughput, imaging fidelity and contrast of a particle beam lithography system. The method is applicable to any particle beam lithography machine or system, and does not require any internal hardware and software modifications to the machine or system.

A multi-beam charged particle system can have reduced field curvature. The multi-beam charged particle system can comprise a charged particle mirror element for compensating a field curvature of charged particle imaging elements. The charged particle mirror element can be configured for generating during use a virtual reflection surface of curved shape for reflecting primary charged particles. The disclosure can be applied for applications of multi-beam charged particle system, where higher beam uniformity and throughput are desired.

A water solution in which an observation sample is, for example, dissolved is sandwiched on a first insulative thin film side provided under a conductive thin film. When an electron beam incident part is charged minus, electric dipoles of water molecules are arrayed along a potential gradient. Electric charges are also generated on the surface of a second insulative thin film. The electric charges are detected by a terminal section and changes to a measurement signal. In a state in which an electron beam is blocked, the minus potential disappears. Consequently, the electric charges on the surface of the first insulative thin film also disappear, and the measurement signal output from the terminal section changes to 0.

Charged particle beam devices, e.g., for repair tasks, are subject to disturbances. A sensor output of one or more sensors is used to compensate the disturbances, e.g., while executing a manipulation mode for repairing defects on a lithography mask.

A dielectric microscopic observation is possible, which suppresses image flow regardless of scanning speed. There are provided a sample chamber 120 holding a sample 200 between a first insulating layer 121 on which a conductive layer 211 to be irradiated with a charged particle beam is laminated and a second insulating layer 122, an amplifier 141 that amplifies a potential change that occurs at an interface between the first insulating layer and the sample as the conductive layer is irradiated with the charged particle beam, and outputs the amplified result as a measurement signal, a main control unit 142 that converts the measurement signal from the amplifier into image data, and corrects the image data with a deconvolution filter 302 to generate corrected image data, a display unit 144 including an observation image display unit 501 and a filter adjustment unit 502 that displays setting information of the deconvolution filter, and an information processing device that displays the corrected image data on the observation image display unit, and when the setting information of the deconvolution filter displayed in the filter adjustment unit is changed, adjusts the deconvolution filter according to the changed setting information.