Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes at least one cooling plate a device for introducing turbulence to the exhaust flowing within the exhaust cooling apparatus. The device may be a plurality of fins, a cylinder with a curved top portion, or a diffuser with angled blades. The turbulent flow of the exhaust within the exhaust cooling apparatus causes particles to drop out of the exhaust, minimizing particles forming in equipment downstream of the exhaust cooling apparatus.

A first material layer, a second material layer, and a photoresist layer may be formed over a substrate. The second material layer may be patterned by transfer of a lithographic pattern therethrough. A conformal spacer layer may be formed over the patterned second material layer in a chamber enclosure of an in-situ deposition-etch apparatus. Spacer films may be formed by anisotropically etching the conformal spacer layer in the chamber enclosure of the in-situ deposition-etch apparatus. The first material layer may be anisotropically etched using a combination of the patterned second material layer and the spacer films as an etch mask in the in-situ deposition-etch apparatus. A high fidelity pattern may be transferred into the first material layer with reduced line edge roughness, reduced line width roughness, and without enlargement of lateral dimensions of openings in the first material layer.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.

A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.

The invention relates to a transport apparatus for transferring a sample between two devices. The transport apparatus comprises a transport tube provided with a carrier for holding a sample. The carrier is movable within said transport tube along a length thereof. The transport apparatus further comprises an actuator tube extending substantially next to said transport tube and which is provided with an actuator element that is movable within said actuator tube. Said actuator element comprises a first magnet part, and said sample carrier is provided with a second magnet part, wherein said first magnet part and said second magnet part are configured such that movement of the sample carrier through said transport tube is linked to movement of the magnetic actuator element through the actuator tube. In this way, movement of the magnetic actuator causes movement of the sample carrier, allowing safe, reliable and protected transport of the sample.

A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

In the present invention, a pressure measurement device for determining the vacuum level within the evacuated housing of a vacuum electrode device is provided that includes an electrically conductive enclosure secured to an interior surface of the housing, an electrically conductive electrode extending through an aperture in the housing, the electrode having a tip at one end positioned within the interior of the housing inside the enclosure to define a gap between the tip and the enclosure and a conductive lead at a second end disposed outside of the housing, and a voltage source connected to the conductive lead to supply a voltage potential to the tip of the electrode. A voltage difference produced between the electrode and the enclosure ionizes gas within the enclosure causing a measurable current to flow between the electrode and the enclosure which can be used to determine the vacuum level in the housing.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.

Embodiments described herein relate to a heat exchanger for abating compounds produced in semiconductor processes. When hot effluent flows into the heat exchanger, a coolant can be flowed to walls of a heat exchanging surface within the heat exchanger. The heat exchanging surface can be a curved shaped which creates a multi stage cross flow path for the hot effluent to flow down the heat exchanger. This flow path forces the hot effluent to hit the cold walls of the heat exchanging surface, significantly cooling the effluent and preventing it from flowing directly into the vacuum pumps and causing heat damage. Embodiments described herein also relate to methods of forming a heat exchanger. The heat exchanger can be created by sequentially depositing layers of thermally conductive material on surfaces using 3-D printing, creating a much smaller foot print and reducing costs.

Operating a pressure system of a device for imaging, analyzing and/or processing an object, and a particle beam device for carrying out this method. In particular, the particle beam device is an electron beam device and/or an ion beam device. The method may include disconnecting a pump from a pressure reservoir, connecting the pressure reservoir to a vacuum chamber, measuring a reservoir pressure existing in the pressure reservoir, determining a first pressure value of the reservoir pressure at a first time and a second pressure value of the reservoir pressure at a second time, determining a functional relationship between the first pressure value of the reservoir pressure and the second pressure value of the reservoir pressure, extrapolating the functional relationship for times later than the second time, determining a threshold time using the extrapolated functional relationship, and determining a remaining time period until the reservoir pressure reaches the pressure threshold.