A stressed substrate for transient electronic systems (i.e., electronic systems that visually disappear when triggered to do so) that includes one or more stress-engineered layers that store potential energy in the form of a significant internal stress. An associated trigger mechanism is also provided that, when triggered, causes an initial fracture in the stressed substrate, whereby the fracture energy nearly instantaneously travels throughout the stressed substrate, causing the stressed substrate to shatter into multiple small (e.g., micron-sized) pieces that are difficult to detect. The internal stress is incorporated into the stressed substrate through strategies similar to glass tempering (for example through heat or chemical treatment), or by depositing thin-film layers with large amounts of stress. Patterned fracture features are optionally provided to control the final fractured particle size. Electronic systems built on the substrate are entirely destroyed and dispersed during the transience event.

A stressed substrate for transient electronic systems (i.e., electronic systems that visually disappear when triggered to do so) that includes one or more stress-engineered layers that store potential energy in the form of a significant internal stress. An associated trigger mechanism is also provided that, when triggered, causes an initial fracture in the stressed substrate, whereby the fracture energy nearly instantaneously travels throughout the stressed substrate, causing the stressed substrate to shatter into multiple small (e.g., micron-sized) pieces that are difficult to detect. The internal stress is incorporated into the stressed substrate through strategies similar to glass tempering (for example through heat or chemical treatment), or by depositing thin-film layers with large amounts of stress. Patterned fracture features are optionally provided to control the final fractured particle size. Electronic systems built on the substrate are entirely destroyed and dispersed during the transience event.

A susceptor includes a pocket in which a wafer is placed. A side surface of the pocket comprises a side-surface circumference portion formed in a circumference shape and a side-surface enlarged portion formed to extend toward an outer circumferential side of the pocket beyond the side-surface circumference portion. In a plan view seen from an open side of the pocket, when a straight line passing through a rotational center of the susceptor and a circumferential center of the side-surface circumference portion is defined as a first straight line and a straight line orthogonal to the first straight line and passing through the circumferential center is defined as a second straight line, the side-surface enlarged portion overlaps the second straight line.

Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded faster.

Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded faster.

Systems and methods are disclosed for automated generation of integrated circuit designs and associated data. These allow the design of processors and SoCs by a single, non-expert who understands high-level requirements; allow the en masse exploration of the design-space through the generation processors across the design-space via simulation, or emulation; allow the easy integration of IP cores from multiple third parties into an SoC; allow for delivery of a multi-tenant service for producing processors and SoCs that are customized while also being pre-verified and delivered with a complete set of developer tools, documentation and related outputs. Some embodiments, provide direct delivery, or delivery into a cloud hosting environment, of finished integrated circuits embodying the processors and SoCs.

One aspect is forming a medical lead for implantation. The method includes forming a plurality of non-ground electrodes, at least one non-ground electrode having a plurality of segments. Overmold portions are formed for the at least one of the plurality of non-ground electrodes, including keys and tabs. One of a plurality of conductors is attached to one segment of the at least one non-ground electrode using the keys and tabs. The non-ground electrodes and plurality of conductors are assembled into electrode assembly and the overmold portions are reflowed. The reflowed electrode assembly is then ground to form the medical lead.

One aspect is forming a medical lead for implantation. The method includes forming a plurality of non-ground electrodes, at least one non-ground electrode having a plurality of segments. Overmold portions are formed for the at least one of the plurality of non-ground electrodes, including keys and tabs. One of a plurality of conductors is attached to one segment of the at least one non-ground electrode using the keys and tabs. The non-ground electrodes and plurality of conductors are assembled into electrode assembly and the overmold portions are reflowed. The reflowed electrode assembly is then ground to form the medical lead.

The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.

The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.