A semiconductor device package having galvanic isolation is provided. The semiconductor device package includes a package substrate having a first inductive coil. A first semiconductor die is attached to a first major surface of the package substrate. The first semiconductor die includes a second inductive coil substantially aligned with the first inductive coil. A second semiconductor die is attached to the first major surface of the package substrate. A wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.

Certain aspects of the present disclosure generally relate to a semiconductor device including an air gap underneath passive devices. The semiconductor device generally includes a substrate layer, a passive device layer, and a dielectric layer disposed between the substrate layer and the passive device layer, wherein the dielectric layer includes an air gap disposed beneath at least one passive device in the passive device layer.

A light-emitting device is disclosed, including: a substrate; a light-emitting diode (LED) formed on a first surface of the substrate, the LED being arranged to emit primary light; a fence disposed on a second surface of the substrate, the fence including a plurality of walls arranged to define a cell; a light-converting structure disposed in the cell, the light-converting structure being arranged to convert at least a portion of the primary light to secondary light having a wavelength that is different from the wavelength of the primary light; and a reflective element formed on one or more outer surfaces of the walls of the fence, such that the reflective element and the light-converting structure are disposed on opposite sides of the walls of the fence.

A display apparatus may include a base substrate including a first portion and a second portion smaller than the first portion, a plurality of pixels disposed on the first portion, a protection substrate disposed below the base substrate, and a groove disposed in a portion of the protection substrate and overlapped with the second portion. The groove may include a first region extending in a first direction, and a second region and a third region, which are arranged along the first direction, wherein the first region is interposed between the second region and the third region. The first and second portions may be arranged in a second direction crossing the first direction, and a width of each of the second and third regions may be larger than a first width of the first region, when measured in the second direction.

A method of manufacturing an implantable stimulation device includes providing a circuit board of the implantable stimulation device, the circuit board optionally equipped with circuit components and being electrically connected to an antenna, adhering one or more electrodes to the circuit board, and applying an insulation material to the circuit board such that the insulation material forms a housing that surrounds the circuit board, the optional circuit components and antenna, while leaving the one or more electrodes exposed for stimulating a tissue.

A method of manufacturing an actuator includes a first electrode layer forming step, a dielectric elastomer layer forming step, and a second electrode layer forming step, and obtains the actuator in which dielectric elastomer layers and electrode layers have been concentrically laminated. In the first electrode layer forming step, an electrode material is provided to an outer circumferential surface of a shaft section to form the electrode layer. In the dielectric elastomer layer forming step, a sheet-like or paste-like dielectric elastomer material is provided to an outer circumferential surface of the electrode layer to form the dielectric elastomer layer. In the second electrode layer forming step, the electrode material is provided to an outer circumferential surface of the dielectric elastomer layer to form the electrode layer.

A method of manufacturing an actuator includes a first electrode layer forming step, a dielectric elastomer layer forming step, and a second electrode layer forming step, and obtains the actuator in which dielectric elastomer layers and electrode layers have been concentrically laminated. In the first electrode layer forming step, an electrode material is provided to an outer circumferential surface of a shaft section to form the electrode layer. In the dielectric elastomer layer forming step, a sheet-like or paste-like dielectric elastomer material is provided to an outer circumferential surface of the electrode layer to form the dielectric elastomer layer. In the second electrode layer forming step, the electrode material is provided to an outer circumferential surface of the dielectric elastomer layer to form the electrode layer.

The present invention designs a measurement scheme for the longitudinal temperature of the film during nitride epitaxial growth, belongs to the field of semiconductor measurement technology. Epitaxial growth technology is one of the most effective methods for preparing nitride materials. The temperature during the growth process restricts the performance of the device. The non-contact temperature measurement method is generally used to measure the temperature of the graphite disk as the base, which can't obtain the longitudinal temperature. The present invention respectively measures the surface temperature of the epitaxial layer and the temperature of the graphite disk by ultraviolet and infrared radiation temperature measurement technologies, and then uses the finite element simulation method to perform thermal field analysis from the bottom surface of the substrate to the surface of the epitaxial layer, so that the longitudinal temperature is obtained, thereby providing a favorable basis for temperature regulation during nitride growth.

A display apparatus may include a base substrate including a first portion and a second portion smaller than the first portion, a plurality of pixels disposed on the first portion, a protection substrate disposed below the base substrate, and a groove disposed in a portion of the protection substrate and overlapped with the second portion. The groove may include a first region extending in a first direction, and a second region and a third region, which are arranged along the first direction, wherein the first region is interposed between the second region and the third region. The first and second portions may be arranged in a second direction crossing the first direction, and a width of each of the second and third regions may be larger than a first width of the first region, when measured in the second direction.

In a copper/titanium/aluminum bonded body of the present invention, a copper member made of copper or a copper alloy and an aluminum member made of aluminum or an aluminum alloy are bonded via a titanium layer, an intermetallic compound containing Cu and Ti is formed at a bonded interface of the copper member and the titanium layer, and a maximum value of a length L.sub.i of an intermetallic compound unformed part along the bonded interface is 20 m or less in the bonding interface of the copper member and the titanium layer, the intermetallic compound unformed part being a part free of formation of the intermetallic compound, and a ratio L.sub.i/L.sub.0 is 0.16 or less, Li being a total length of the intermetallic compound unformed part along the bonded interface and of L.sub.0 being a total length of the bonded interface along the bonded interface.