A system for adjusting a gas path flow of an apparatus includes: a process task prediction component of the apparatus, a gas path flow monitoring component, and a gas path flow control component; wherein the process task prediction component of the apparatus predicts a process schedule of the apparatus, the gas path flow monitoring component is configured to monitor a gas path flow of the apparatus in real time, when the gas path flow exceeds the preset range of flow, the gas path flow control component judges a current process status of the apparatus based on the process schedule, and issues a corresponding flow control instruction

An optical inspection is performed to detect potential defects within integrated circuit devices and a first electron-based inspection of less than all of the potential defects is performed to identify primary actual defects. A process window of manufacturing parameter settings used to manufacture the integrated circuit devices is identified and the integrated circuit devices manufactured using the manufacturing parameter settings inside the process window have less than a threshold number of the primary actual defects. To identify additional actual defects a second electron-based inspection is performed that is limited to selected ones of the potential defects in the integrated circuit devices that were manufactured using the manufacturing parameter settings inside the process window but were uninspected in the first electron-based inspection.

One or more die stacks are disposed on a redistribution layer (RDL) to make an electronic package. The die stacks include a die and one or more Through Silicon Via (TSV) dies. Other components and/or layers, e.g. interposes layers, can be included in the structure. An epoxy layer disposed on the RDL top surface and surrounds and attached to all the TSV die sides and all the die sides. Testing circuitry is located in various locations in some embodiments. Locations including in the handler, die, TSV dies, interposes, etc. Testing methods are disclosed, Methods of making including “die first” and “die last” methods are also disclosed. Methods of making heterogenous integrated structure and the resulting structures are also disclosed, particularly for large scale, e.g. wafer and panel size, applications.

An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.

There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.

The first layer mark and the second layer mark are adapted to be projected onto each other during the lithographic process. The first layer components and the second layer components are adapted to be arranged in a plurality of different overlay configurations, each overlay configuration comprising a number of the plurality of the first layer components and a number of the plurality of the second layer components, and each overlay configuration having a different overlay distance at which each first layer component is arranged in a first direction of an associated second layer component of the second layer components. The method comprises determining an overlay step which represents a difference between the different overlay distances of the plurality of overlay configurations, determining a largest overlay distance, determining the number of first layer components and/or the number of associated second layer components in each overlay configuration.

The present disclosure provides a semiconductor manufacturing process control method and apparatus, a device, and a storage medium. The method includes: analyzing wafer lot information and determining a current product lot of a current product; obtaining historical measurement data within a specified period; when determining that the historical measurement data does not include first measurement data of the current product lot, if determining, based on preset configuration information, that the historical measurement data includes second measurement data of a target product lot, determining a target regulatory data based on the preset configuration information and the second measurement data; and controlling a production parameter of the current product based on the target regulatory data.

A critical dimension uniformity control method is provided. The method includes gathering a first CDU by a first critical dimension from a first wafer after being processed by a first surface process. The method includes determining a first calibration process based on the first CDU. The determining includes an intra dose correction step for correcting reticle-dependent deviation, a thru-slit dose sensitivity correction step for correcting time-dependent deviation, and an inter dose correction step for correcting process-dependent deviation. The method includes calibrating the first surface process by the first calibration process to determine a second surface process different from the first surface process.

A method for controlling a critical dimension of a mask layer is described. The method includes receiving a first primary parameter level, a second primary parameter level, a first secondary parameter level, a second secondary parameter level, and a third secondary parameter level. The method also includes generating a primary signal having the first primary parameter level, and transitioning the primary signal from the first primary parameter level to the second primary parameter level. The method further includes generating a secondary radio frequency (RF) signal having the first secondary parameter level, and transitioning the secondary RF signal from the first secondary parameter level to the second secondary parameter level. The method includes transitioning the secondary RF signal from the second secondary parameter level to the third secondary parameter level.

A computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate. Non-correctable error is used to help predict locations where defects are likely to be present, allowing improvements in metrology throughput. In an embodiment, non-correctable error information relates to imaging error due to limitations on, for example, the lens hardware, imaging slit size, and/or other physical characteristics of the lithography system. In an embodiment, non-correctable error information relates to imaging error induced by lens heating effects.