A current introduction terminal includes a board made of resin. The board has a first face and a second face opposite each other. The board hermetically separates environments of different air pressures from each other. A plurality of through via holes corresponding both to a plurality of metal terminals of a first surface-mount connector to be mounted on the first face and to a plurality of metal terminals of a second surface-mount connector to be mounted on the second face are formed to penetrate between the first and second faces, and then hole parts of the through via holes are filled with resin.

A sealing structure including: a set of base members forming a sealed space; a through-hole which is formed in at least one of the base members, and communicates with the sealed space; and a sealing member that seals the through-hole. An underlying metal film including a bulk-like metal such as gold is provided on a surface of the base member provided with the through-hole. The sealing member seals the through-hole while being bonded to the underlying metal film, and includes: a sealing material which is bonded to the underlying metal film, and includes a compressed product of a metal powder of gold or the like, the metal powder having a purity of 99.9% by mass or more; and a lid-like metal film which is bonded to the sealing material, and includes a bulk-like metal such as gold. Further, the sealing material includes: an outer periphery-side densified region being in contact with an underlying metal film; and a center-side porous region being in contact with the through-hole. The densified region has a porosity of 10% or less in terms of an area ratio at any cross-section.

A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

A flexible circuit package. The circuit package includes a termination point on a flexible base substrate. The termination point is connected with an interface by conductive material on the base substrate. The conductive material extends across the surface area of the base substrate in multiple individual connections, which are in communication with each other and separated by voids in the conductive material for mitigating communication failure between the termination point and the interface during or following flexion, stretching, compression or other deformation of the base substrate and the circuit package. The termination point may include an input module such as a sensor, switch or other input. The termination point may include an output module such as a light, vibrator or other output. The interface may include an output interface for receiving data or an input interface for sending a command or other signal.

An insulating layer includes a cavity in a portion covering a conductive layer. A through conductor includes an insertion portion inside the cavity and a shoulder portion on a virtual boundary surface with the insertion portion when viewed in a direction parallel or substantially parallel to a main surface. The cavity is located alternately outside and inside an edge of the shoulder portion in a circumferential direction of the shoulder portion when viewed in a direction orthogonal or substantially orthogonal to the main surface. A portion between a portion of the cavity located outside the edge of the shoulder portion and the insertion portion is filled with a portion of the support when viewed in the direction orthogonal or substantially orthogonal to the main surface.

A radio-frequency module includes: a module substrate having a major face; a first circuit component and a second circuit component that are disposed over the major face; and a metal shield plate disposed over the major face and set to a ground potential. The metal shield plate includes a shield part extending in a direction perpendicular to the major face, and a joint part parallel to the major face and spaced apart from the major face, the joint part extending from the shield part. A top face of at least one of the first circuit component and the second circuit component is connected with the joint part by a bonding wire. With the module substrate seen in plan view, the metal shield plate is disposed between the first circuit component and the second circuit component.

Provided are semiconductor packages having through electrodes and methods of fabricating the same. The method may include may include forming a wafer-level package including first semiconductor chips stacked on a second semiconductor chip, forming a chip-level package including fourth semiconductor chips stacked on a third semiconductor chip stacking a plurality of the chip-level packages on a back surface of the second semiconductor substrate of the wafer-level package, polishing the first mold layer of the wafer-level package and the first semiconductor chips to expose a first through electrodes of the first semiconductor chip, and forming outer electrodes on the polished first semiconductor chips to be connected to the first through electrodes, respectively.

A semiconductor device includes a first case part, a second case part coupled to the first case part to provide a case, a semiconductor module disposed within the case closer to the second case part than to the first case part, and a plate interposed between the first case part and the semiconductor module. The plate is a thermal conductor, that is a material having thermal conductivity, to transfer heat generated by the semiconductor module to the case where the heat can dissipate to the outside of the semiconductor device.

A semiconductor device includes a first case part, a second case part coupled to the first case part to provide a case, a semiconductor module disposed within the case closer to the second case part than to the first case part, and a plate interposed between the first case part and the semiconductor module. The plate is a thermal conductor, that is a material having thermal conductivity, to transfer heat generated by the semiconductor module to the case where the heat can dissipate to the outside of the semiconductor device.

A ceramic substrate is mainly constituted of ceramic, and has a first main surface and a second main surface located opposite to the first main surface. A recessed portion recessed toward a first main surface side is formed in the second main surface. A wire portion extending from an outer peripheral surface of the ceramic substrate to inside of the recessed portion is formed, and a bottom portion located on the first main surface side in the recessed portion has a portion thinner than another portion of the ceramic substrate other than the bottom portion.