A semiconductor device having a semiconductor substrate with first and second main surfaces that face one another in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer has a first electrode layer on the semiconductor substrate, a dielectric layer on the first electrode layer, a second electrode layer on the dielectric layer, and first and second outer electrodes electrically connected to the first and second electrode layers, respectively. The semiconductor substrate has a first end-portion region in which the circuit layer is not provided on the semiconductor substrate and on the side of the first end surface. In the first end-portion region, a first exposed portion is provided that is exposed between the first main surface and the first end surface.

A semiconductor device having a semiconductor substrate with first and second main surfaces that face one another in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer has a first electrode layer on the semiconductor substrate, a dielectric layer on the first electrode layer, a second electrode layer on the dielectric layer, and first and second outer electrodes electrically connected to the first and second electrode layers, respectively. The semiconductor substrate has a first end-portion region in which the circuit layer is not provided on the semiconductor substrate and on the side of the first end surface. In the first end-portion region, a first exposed portion is provided that is exposed between the first main surface and the first end surface.

Embodiments of the present disclosure provide an IC packaging structure and an IC packaging method, relating to the chip packaging field. The IC packaging structure includes: a substrate, a stress buffer sheet mounted on the substrate; a packaged chip mounted on the stress buffer sheet, and a plastic package body coated outside the packaged chip, wherein the packaged chip is electrically connected to the substrate, and the stress buffer sheet is used for buffering stress acting on the packaged chip. Compared with the prior art, in the IC packaging structure provided in the present disclosure, the stress buffer sheet is mounted on the substrate through silver glue, the packaged chip is mounted on the stress buffer sheet through silver glue.

A semiconductor package includes a semiconductor die, an encapsulant body of electrically insulating material that encapsulates the semiconductor die, a thermal conduction plate comprising an outer surface that is exposed from the encapsulant body, a region of thermal interface material interposed between the thermal conduction plate and the semiconductor die, the region of thermal interface material being a liquid or semi-liquid, and a barrier that is configured to prevent the thermal interface material of the region from flowing laterally across the barrier.

A semiconductor package includes a semiconductor die, an encapsulant body of electrically insulating material that encapsulates the semiconductor die, a thermal conduction plate comprising an outer surface that is exposed from the encapsulant body, a region of thermal interface material interposed between the thermal conduction plate and the semiconductor die, the region of thermal interface material being a liquid or semi-liquid, and a barrier that is configured to prevent the thermal interface material of the region from flowing laterally across the barrier.

A terminal includes a substrate made of metal, an electrode portion that is formed of the same material as the substrate and functions as an electrode, and an insulating resin that is provided between the substrate and the electrode portion so as to surround the electrode portion and insulates the substrate and the electrode portion from each other.

A semiconductor module includes a semiconductor switching element, a multiple of bases, on at least one of which the semiconductor switching element is mounted, a molded resin that seals the semiconductor switching element and the multiple of bases, a multiple of terminals formed integrally with each one of the multiple of bases and provided extending from an outer periphery side face of the molded resin, and a recessed portion or a protruding portion having a depth or a height such that creepage distance between the multiple of terminals is secured, and formed so as to cross an interval between the multiple of terminals, in one portion of the outer periphery side face of the molded resin between the multiple of terminals.

A radio-frequency module includes a multilayer substrate, a first semiconductor device, a second semiconductor device, a mold layer, and a shield layer. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The mold layer seals at least the second semiconductor device. The shield layer 80 covers the mold layer. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. The mold layer does not cover a top face of the second semiconductor device.

A module includes a substrate including a first surface, a first component mounted on the first surface, at least a part of which is covered with a first conductive film, a sealing resin arranged to cover the first surface and the first component, and a shield film that covers a part of a surface of the sealing resin on a side distant from the substrate. The surface of the sealing resin on the side distant from the substrate includes a shielded region covered with the shield film when viewed in a direction perpendicular to the first surface and a non-shielded region not covered with the shield film. The non-shielded region is superimposed on at least a part of the first conductive film.

A module includes a substrate including a first surface, a first component mounted on the first surface, at least a part of a surface of which on a side distant from the substrate is covered with a first conductive film, a sealing resin arranged to cover the first surface and the first component, and a shield film that covers at least a part of a surface of the sealing resin on the side distant from the substrate. The shield film includes a first shield portion superimposed on at least a part of the first conductive film and a second shield portion. The first shield portion is isolated from the second shield portion by a groove that divides the shield film and is provided to such a depth as entering the sealing resin. The first shield portion is electrically independent.