An interconnection structure for IC package onto the external device is discussed. The IC package has a voltage regulator contained therein; and the external device has a load assembled thereupon. A plurality of connection devices with elasticity are attached to the IC package, so that when a perpendicular force is applied to the connection devices, the IC package is electrically coupled to the external device to provide power supply to the load with ease replacement.

A semiconductor device (1) according to the present disclosure includes a semiconductor chip (2), an interposer substrate (3), and a die-bonding material (4) formed in a partially opened annular shape in a plan view. The semiconductor chip (2) includes a region in which an integration density of an electronic circuit is high (23, 24, and 25) and a region in which the integration density is low (22). The semiconductor chip (2) is implemented on the interposer substrate (3). The die-bonding material (4) formed in a partially opened annular shape in a plan view is provided between the region in which the integration density is high (23, 24, and 25) in the semiconductor chip (2) and the interposer substrate (3).

A system for forming a conformal electromagnetic interference shield on at least one singulated electronic package (300), including a tray preparation module that prepares a tray (200) by mounting an electromagnetic interference tape (202) onto a frame (201), with the electromagnetic interference tape (202) covering the entirety of the frame (201), a pick and place module for placing at least one singulated electronic packages (300) onto the tray (200), a jig (100) for supporting the tray (200) having the singulated electronic packages (300), and a sputtering machine that forms a conformal electromagnetic interference shield onto the singulated electronic packages (300) through a sputtering process. The jig (100) includes a body having an arcuate surface (101), wherein the arcuate surface (101) of the jig (100) allows substantially continuous contact between the jig (100) and the electronic package (300).

A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming a dielectric layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding, and bonding a die stack to through-silicon vias in the device die.

A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming a dielectric layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding, and bonding a die stack to through-silicon vias in the device die.

A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

The present disclosure relates to an IC chip holder capable of alleviating an impact if the IC chip holder is dropped or collides with another object. In the IC chip holder, an upper housing body is provided, on a side of electric contacts of an IC chip, with an elastic deformation portion capable of elastically deforming toward the inside of the upper housing body. Thus, since the elastic deformation portion elastically deforms toward the inside of the upper housing body, if the IC chip holder is dropped or collides with another object, the elastic deformation portion bends and the impact is alleviated. Thus, a possibility of the IC chip being damaged is reduced.

The present disclosure relates to an IC chip holder capable of alleviating an impact if the IC chip holder is dropped or collides with another object. In the IC chip holder, an upper housing body is provided, on a side of electric contacts of an IC chip, with an elastic deformation portion capable of elastically deforming toward the inside of the upper housing body. Thus, since the elastic deformation portion elastically deforms toward the inside of the upper housing body, if the IC chip holder is dropped or collides with another object, the elastic deformation portion bends and the impact is alleviated. Thus, a possibility of the IC chip being damaged is reduced.

In an embodiment, a device includes: a package component including: integrated circuit dies; an encapsulant around the integrated circuit dies; a redistribution structure over the encapsulant and the integrated circuit dies, the redistribution structure being electrically coupled to the integrated circuit dies; sockets over the redistribution structure, the sockets being electrically coupled to the redistribution structure; and a support ring over the redistribution structure and surrounding the sockets, the support ring being disposed along outermost edges of the redistribution structure, the support ring at least partially laterally overlapping the redistribution structure.