Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts—formed in at least one of the polysilicon fill material and the stack structure—deforming, misaligning, or forming electrical shorts with neighboring contacts.

A device includes an integrated circuit, a first seal ring, a second seal ring, and a dielectric layer. The first seal ring surrounds the integrated circuit and includes a plurality of first seal portions separated from each other by a plurality of first gaps. The second seal ring surrounds the integrated circuit, between the integrated circuit and the first seal ring and includes a plurality of second seal portions separated from each other by a plurality of second gaps. The dielectric layer surrounds the first and second seal rings and includes a plurality of first filling portions in the first gaps, respectively, and a plurality of second filling portions in the second gaps, respectively. A connection line of one of the first filling portions and one of the second filling portions closest to said one of the first filling portions is not parallel to edges of the integrated circuit.

A semiconductor package includes a substrate; a die mounted on a top surface of the substrate in a flip-chip fashion; and a lid mounted on the die and on a perimeter of the substrate. The lid includes a cover plate and four walls formed integral with the cover plate. A liquid-cooling channel is situated between the cover plate of the lid and a rear surface of the die for circulating a coolant relative to the semiconductor package.

A leadframe includes a die pad and a set of electrically conductive leads. A semiconductor die, having a front surface and a back surface opposed to the front surface, is arranged on the die pad with the front surface facing away from the die pad. The semiconductor die is electrically coupled to the electrically conductive leads. A package molding material is molded over the semiconductor die arranged on the die pad. A stress absorbing material contained within a cavity delimited by a peripheral wall on the front surface of the semiconductor die is positioned intermediate at least one selected portion of the front surface of the semiconductor die and the package molding material.

A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

The present disclosure relates to semiconductor structures, and more particularly, to crackstop structures and methods of manufacture. The structure includes: a die matrix comprising a plurality of dies separated by at least one scribe lane; and a crackstop structure comprising at least one line within the at least one scribe lane between adjacent dies of the plurality of dies.

An electronic component housing package includes an insulating substrate including a first surface with a mounting region mounting an electronic component, a second surface located opposite to the first surface, a plurality of side surfaces located between the first surface and the second surface, and a corner portion located between two of the side surfaces; an external connection conductor located on the second surface; and a corner conductor connected to the external connection conductor. The corner conductor is located from the external connection conductor toward the corner portion in a manner to increase the distance from the second surface.

A semiconductor device is provided, including a leadframe, a die attached to the leadframe using a first solder, a source clip and a gate clip attached to the die using a second solder, and a drain clip attached to the leadframe. The semiconductor device is inverted, so that the source clip and the gate clip are positioned on the bottom side of the semiconductor device, and the leadframe is positioned on the top side of the semiconductor device so that the leadframe is a top exposed drain clip. The source clip and/or the drain clip comprise a half cut locking feature. The half cut locking feature can be formed as a wing and located at the sides of the source clip and the gate clip.

According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

A chip on film package includes a base film, a patterned circuit layer, a chip and a reinforcing sheet. The base film includes a first surface, a second surface opposite to the first surface and a mounting region located on the first surface. The patterned circuit layer is disposed on the first surface. The chip is mounted on the mounting region and electrically connected to the patterned circuit layer. The reinforcing sheet is disposed on the first surface and/or the second surface and exposes the chip, wherein a flexibility of the reinforcing sheet is substantially equal to or greater than a flexibility of the base film.