An integrated electronic device including: a main body delimited by a front surface; a top conductive region extending within the main body, starting from the front surface; a first dielectric region extending on the front surface; and a barrier structure, arranged on the first dielectric region. A first aperture extends through the barrier structure and the first dielectric region; the first aperture is delimited at bottom by the top conductive region. The integrated electronic device further includes a contact structure including at least a first conductive region extending within the first aperture, in direct contact with the top conductive region and the barrier structure.

The present disclosure is directed to at least one embodiment of a die including a sidewall having a uniform surface and an irregular surface. The uniform surface may be a scalloped surface and scallops of the scalloped surface are substantially the same size and shape relative to each other. The irregular surface has a more irregular texture as compared to the uniform surface. The irregular surface may include a plurality of randomly spaced high points and a plurality of randomly spaced low points that are between adjacent ones of the high points. In a method of manufacturing the die, a cavity is pre-formed in a substrate and a multilayer structure is formed on the substrate. The multilayer structure includes an active area that is aligned with and overlies the cavity. After the multilayer structure is formed, at least one recess is formed extending into the multilayer structure to the cavity. Forming the recess forms a die structure suspended above the cavity and an extension extending from the die structure to a suspension structure surrounding the die structure. The die structure is released from the die suspension structure by breaking the extension.

In one example, an electronic device comprises a cavity substrate comprising a substrate base comprising a top side and a bottom side and a cavity wall over the substrate base and defining a cavity, an electronic component over the substrate base and in the cavity, a lid comprising a top side and a bottom side, wherein the lid is over the substrate base and the cavity wall to define an interior of the cavity and an exterior of the cavity, an adhesive between the bottom side of the lid and a top side of the cavity wall, and a vent seal between the interior of the cavity and the exterior of the cavity. Other examples and related methods are also disclosed herein.

Provided are an interconnect structure and an electronic device including the same. The interconnect structure may include a conductive wiring having a certain pattern, a dielectric layer on side surfaces of the conductive wiring, a capping layer on the conductive wiring, and a graphene layer on the dielectric layer. The graphene layer may include a graphene material. A ratio of carbons having sp.sup.3 bonds to carbons having sp.sup.2 bonds in the graphene material is 1 or less.

An electronic chip includes a seal ring whose shape is contained within a rectangle, of a width equal to a maximum width of the electronic chip and a length equal to a maximum length of the electronic chip. At least one test pad is arranged at least partially within the rectangle. The test pad is shared with at least one other adjacent electronic chip.

Disclosed is a radio frequency integrated circuit (RFIC) chip that includes an integrated circuit (IC) area and a crackstop laterally surrounding the IC area. The crackstop includes a metallic barrier (or, alternatively, concentric metallic barriers) electrically isolated from the IC area. One or more noise suppressors and, particularly, one or more passive filters (e.g., low pass filter(s), high pass filter(s), band pass filter(s), and/or band stop filter(s)) are integrated into the structure of the metallic barrier(s) to inhibit propagation, through the crackstop, of noise signals within a specific RF range. The specific RF range can be a customer-specified operating parameter. By embedding customized noise suppressor(s) into the crackstop, local signal interference unique to the customer-specified operating parameters can be minimized while also avoiding or at least minimizing the risk of moisture ingress to the IC area. Also disclosed is a method of forming the chip.

The present application discloses a display panel, an array substrate, and a manufacturing method thereof. The array substrate includes a substrate, a thin-film transistor layer, an insulating nanoparticle layer, and an organic polymer layer. The thin-film transistor layer is disposed on the substrate. The insulating nanoparticle layer is disposed on the substrate and covers the thin-film transistor layer. The organic polymer layer is stacked on a side of the insulating nanoparticle layer away from the thin-film transistor layer and covers the insulating nanoparticle layer.

The present technology relates to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers that are alternately stacked, a channel plug at least partially passing through the stack structure on a cell region, and a plurality of support structures at least partially passing through the stack structure on a contact region.

A method of semiconductor die singulation is provided. The method includes forming a first trench along a singulation lane of a semiconductor wafer. A second trench is formed extending from a bottom of the first trench. A portion of the semiconductor wafer remains between a bottom of the second trench and a backside of the semiconductor wafer. A cut is formed by way of a laser to singulate die of the semiconductor wafer. The cut extends through the portion of the semiconductor wafer remaining between the bottom of the second trench and the backside of the semiconductor wafer.

The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a planarization layer disposed on the first substrate and located in the display region and the peripheral region; and an organic passivation layer disposed on the first substrate, covering the planarization layer and located in the display region and the peripheral region; wherein the planarization layer further comprises a first region planarization layer located in the display region, and a second region planarization layer located in the peripheral region, the first region planarization layer is formed with a first sidewall in a boundary region between the display region and the peripheral region, and a height of the first sidewall is greater than a height of the first region planarization layer. The invention can effectively reduce probability of the organic passivation layer on sidewalls of the passivation layers, and can better avoid moisture from penetrating the organic material into the display panel.