The present publication discloses a method for manufacturing a circuit-board structure. In the method, a conductor layer is made, which comprises a conductor foil and a conductor pattern on the surface of the conductor foil. A component is attached to the conductor layer and the conductor layer is thinned, in such a way that the conductor material of the conductor layer is removed from outside the conductor pattern.

A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.

We disclose herein a semiconductor device sub-assembly comprising: a plurality of semiconductor units laterally spaced to one another; a semiconductor unit locator comprising a plurality of holes, wherein each semiconductor unit is located in each hole of the semiconductor unit locator; a plurality of pressure means for applying pressure to each semiconductor unit, and a conductive malleable layer located between the plurality of pressure means and the semiconductor unit locator.

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

This application is directed to a semiconductor system including a substrate, an electronic device, a plurality of compliant interconnects and a support structure. The substrate has a first surface and a plurality of first contacts formed on the first surface. The electronic device has a second surface facing the first surface of the substrate, and a plurality of second contacts formed on the second surface. The compliant interconnects are disposed between the first surface of the substrate and the second surface of the electronic device, and are configured to electrically couple the first contacts on the first surface of the substrate to the second contacts on the second surface of the electronic device. The support structure is coupled to the substrate and the electronic device, and extends beyond a footprint of the electronic device. The support structure is configured to mechanically couple the electronic device to the substrate.

A semiconductor device and method is disclosed. The semiconductor device may include a semiconductor substrate including an active area, a metal layer structure over the active area, wherein the metal layer structure is configured to form an electrical contact, the metal layer structure including a solder area, a buffer area, and a barrier area between the solder area and the buffer area, wherein, in the barrier area, the metal layer structure is further away from the active area than in the solder area and in the buffer area, and wherein each of the solder area and the buffer area is in direct contact with the active area or with a wiring layer structure arranged between the active area and the metal layer structure.

A package structure includes a first die, an encapsulant and a securing element. The encapsulant encapsulates the first die. The securing element penetrates through the encapsulant and a corner of the first die and electrically isolated from the first die.

Aspects of the present disclosure relate to a molded electronic package and a method for manufacturing the same. The molded electronic package includes a first substrate, a second substrate, an electronic component arranged on the first substrate, a spring member arranged between the second substrate and the electronic component, the spring member including a first contact portion being fixated relative to the second substrate, and a second contact portion physically contacting the electronic component, and a body of solidified molding compound configured to encapsulate the electronic component and the spring member and to mutually fixate the first substrate, the second substrate, the electronic component and the spring member. The second substrate and the spring member are electrically and/or thermally conductive.

The present publication discloses a circuit-board structure, including a conductor layer on an insulating material layer, and a conductor pattern on top of the conductor foil. A component is attached to the conductor foil and the conductor pattern, the component embedded at least in part in adhesive which attaches the component to the insulating material layer. A recess is formed in the conductor foil and the insulating material layer, and contact openings are in the insulating material layer at locations of contact areas of the component. Conductor material of the conductor foil is not present outside the conductor pattern, and the conductor foil is located between the conductor pattern and the insulating material layer.