A clip preform includes a die contact portion and an aligner structure. An intermediate portion connects the die contact portion to a lead contact portion in the aligner structure. The die contact portion is configured to contact a semiconductor die. The aligner structure is configured to attach the lead contact portion to a lead post. The die contact portion, the intermediate portion, and the aligner structure form a structure of a primary clip for connecting the semiconductor die to the lead post. The clip preform is severable by removing parts of the die contact portion and the intermediate portion of the clip preform to form a secondary clip for connecting the semiconductor die to the lead post. The aligner structure, a remaining part of the die contact portion, and a remaining part of the intermediate portion of the clip preform form a structure of the secondary clip.

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

An embodiment includes a first package component including a first integrated circuit die and a first encapsulant at least partially surrounding the first integrated circuit die. The device also includes a redistribution structure on the first encapsulant and coupled to the first integrated circuit die. The device also includes a first thermal module coupled to the first integrated circuit die. The device also includes a second package component bonded to the first package component, the second package component including a power module attached to the first package component, the power module including active devices. The device also includes a second thermal module coupled to the power module. The device also includes a mechanical brace extending from a top surface of the second thermal module to a bottom surface of the first thermal module, the mechanical brace physically contacting the first thermal module and the second thermal module.

A mounting structure for a heater element includes a heater element having a surface to be cooled, a board on which the heater element is mounted, a cooling member that cools the surface to be cooled of the heater element mounted on the board, and a supporting member temporarily fixed to the board, the supporting member temporarily fixing the heater element.

The present publication discloses a method for manufacturing a circuit-board structure. In the method, a conductor layer is made, which comprises a conductor foil and a conductor pattern on the surface of the conductor foil. A component is attached to the conductor layer and the conductor layer is thinned, in such a way that the conductor material of the conductor layer is removed from outside the conductor pattern.

A die attach system is provided. The die attach system includes: a support structure for supporting a substrate; a die supply source including a plurality of die for attaching to the substrate; and a bond head for bonding a die from the die supply source to the substrate, the bond head including a bond tool having a contact portion for contacting the die during a transfer from the die supply source to the substrate, the bond head including a spring portion engaged with the bond tool such that the spring portion is configured to compress during pressing of the die against the substrate using the contact portion of the bond tool.

We disclose herein a semiconductor device sub-assembly comprising a plurality of semiconductor units of a first type, a plurality of semiconductor units of a second type; a plurality of conductive blocks operatively coupled with the plurality of semiconductor units, a conductive malleable layer operatively coupled with the plurality of conductive blocks, wherein the plurality of conductive blocks are located between the conductive malleable layer and the plurality of semiconductor units. In use, at least some of the plurality of conductive blocks are configured to apply a pressure on the conductive malleable layer, when a predetermined pressure is applied to the semiconductor device sub-assembly. At least one semiconductor unit of a second type is configured to withstand an applied pressure greater than a threshold pressure.

An embodiment includes a first package component including a first integrated circuit die and a first encapsulant at least partially surrounding the first integrated circuit die. The device also includes a redistribution structure on the first encapsulant and coupled to the first integrated circuit die. The device also includes a first thermal module coupled to the first integrated circuit die. The device also includes a second package component bonded to the first package component, the second package component including a power module attached to the first package component, the power module including active devices. The device also includes a second thermal module coupled to the power module. The device also includes a mechanical brace extending from a top surface of the second thermal module to a bottom surface of the first thermal module, the mechanical brace physically contacting the first thermal module and the second thermal module.

The power module comprises an electronic board (EB), in which at least one power switching branch is integrated, a capacitor (C.sub.E) and at least three DC power supply busbars (B1, B2, B3), wherein the electronic board is mounted between a first busbar (B1) and a second busbar (B2) and the capacitor is mounted between the second busbar (B2) and a third busbar (B3) and the electronic board, the capacitor and the busbars comprise electric contact faces allowing assembly, of the “press pack” type, of the electronic board and of the capacitor.