A memory device includes an array of memory cells configured on a die or chip and coupled to sense lines and access lines of the die or chip and a respective sense amplifier configured on the die or chip coupled to each of the sense lines. Each of a plurality of subsets of the sense lines is coupled to a respective local input/output (I/O) line on the die or chip for communication of data on the die or chip and a respective transceiver associated with the respective local I/O line, the respective transceiver configured to enable communication of the data to one or more device off the die or chip.

Provided is a fan-out semiconductor package including a package body having a fan-in region and a fan-out region, the fan-out region surrounding the fan-in region and including a body wiring structure; a fan-in chip structure in the fan-in region, the fan-in chip structure comprising a chip and a chip wiring structure on a top surface of the chip; a first redistribution structure on a bottom surface of the package body and a bottom surface of the fan-in chip structure, the first redistribution structure comprising first redistribution elements extending towards the fan-out region; and a second redistribution structure on a top surface of the package body and a top surface of the chip wiring structure, the second redistribution structure comprising second redistribution elements extending towards the fan-out region.

Provided is a fan-out semiconductor package including a package body having a fan-in region and a fan-out region, the fan-out region surrounding the fan-in region and including a body wiring structure; a fan-in chip structure in the fan-in region, the fan-in chip structure comprising a chip and a chip wiring structure on a top surface of the chip; a first redistribution structure on a bottom surface of the package body and a bottom surface of the fan-in chip structure, the first redistribution structure comprising first redistribution elements extending towards the fan-out region; and a second redistribution structure on a top surface of the package body and a top surface of the chip wiring structure, the second redistribution structure comprising second redistribution elements extending towards the fan-out region.

A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

Tamper-respondent assemblies are provided which include an enclosure mounted to a circuit board and enclosing one or more components to be protected within a secure volume. A tamper-respondent sensor covers, at least in part, an inner surface of the enclosure, and includes at least one tamper-detect circuit. A monitor circuit is disposed within the secure volume to monitor the tamper-detect circuit(s) for a tamper event. A pressure connector assembly is also disposed within the secure volume, between the tamper-respondent sensor and the circuit board. The pressure connector assembly includes a conductive pressure connector electrically connecting, at least in part, the monitor circuit and the tamper-detect circuit(s) of the tamper-respondent assembly, and a spring-biasing mechanism to facilitate breaking electrical connection of the conductive pressure connector to the tamper-detect circuit(s) with a tamper event.

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a substrate that includes a plurality of vias, a first chip stack on the substrate and including a plurality of first semiconductor chips that are sequentially stacked on the substrate, and a plurality of first non-conductive layers between the substrate and the first chip stack and between neighboring first semiconductor chips. Each of the first non-conductive layers includes first extensions that protrude outwardly from first lateral surfaces of the first semiconductor chips. The more remote the first non-conductive layers are from the substrate, the first extensions protrude a shorter length from the first lateral surfaces of the first semiconductor chips.

Methods, systems, and devices for dynamic power distribution for stacked memory are described. A stacked memory device may include switching components that support dynamic coupling between a shared power source of the memory device and circuitry associated with operating memory arrays of respective memory dies. In some examples, such techniques include coupling a power source with array circuitry based on an access activity or a degree of access activity for the array circuitry. In some examples, such techniques include isolating a power source from array circuitry based on a lack of access activity or a degree of access activity for the array circuitry. The dynamic coupling or isolation may be supported by various signaling of the memory device, such as signaling between memory dies, signaling between a memory die and a central controller, or signaling between the memory device and a host device.

Semiconductor devices may include a first stack structure including interlayer insulating layers and gate electrodes alternately stacked in a first direction perpendicular to an upper surface of a substrate on a first region of the substrate and including a first lower stack structure and a first upper stack structure, a second stack structure including the interlayer insulating layers and sacrificial insulating layers alternately stacked in the first direction on a second region of the substrate and including a second lower stack structure and a second upper stack structure, a channel structure penetrating the first upper stack structure and the first lower stack structure, extending in the first direction, and including a channel layer, and an align key structure penetrating the second lower stack structure and extending in the first direction. The second upper stack structure may include a first align key region on the align key structure.

To help reduce program disturbs in non-selected NAND strings of a non-volatile memory, a sub-block based boosting scheme in introduced. For a three dimensional NAND memory structure, in which the memory cells above a joint region form an upper sub-block and memory cells below the joint region form a lower sub-block, dummy word lines in the joint region act as select gates to allow boosting at the sub-block level when the lower block is being programmed in a reverse order.