Various embodiments of the disclosure relate to an electronic device including a display and a camera. The electronic device may include a camera overlapping the display and configured to photograph external light passing through the display, wherein the display may include: a colorless and transparent substrate, a pixel layer disposed in a first direction from the substrate and comprising organic light-emitting diode (OLED) type pixels, an organic encapsulation layer (e.g., thin film encapsulation (TFE)) disposed in the first direction from the pixel layer, and a color filter layer disposed in the first direction from the organic encapsulation layer, wherein the display may include: a first area overlapping at least a portion of the camera and a second area not overlapping the camera, wherein an arrangement density of a first group of pixels in the first area may be lower than an arrangement density of a second group of pixels in the second area, and wherein the color filter layer may include first color filters overlapping the pixels of the first group, second color filters overlapping the pixels of the second group, a black matrix disposed between the second color filters in the second area, and a transmission area disposed between the first color filters in the first area.

The present application provides a chip package structure and an electronic device, which could reduce a chip package thickness and implement ultra-thinning of chip package. The chip package structure includes a chip, a substrate, a lead and a lead protection adhesive; the lead is configured to electrically connect the chip and the substrate; the lead protection adhesive is configured to support the lead, where a highest point of the lead protection adhesive is not higher than a highest point of an upper edge of the lead.

An organic light-emitting display panel having a display area and a non-display area surrounding the display area and includes a base substrate, an organic light-emitting layer, a pixel definition layer, and a microlens layer that are located in the display area is disclosed. The organic light-emitting layer is located at a side of the base substrate and includes light-emitting units. The pixel definition layer includes first openings, and each light-emitting unit is located in one of the first openings. The microlens layer is located at a side of the pixel definition layer facing away from the base substrate and includes at least one first microlens. An orthogonal projection of the first microlens on the base substrate is located between orthogonal projections of two adjacent first openings on the base substrate.

An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source.

A display device includes a substrate; at least one data line disposed on the substrate; a first pattern disposed on the substrate and spaced apart from the data line; a first insulating layer at least partially disposed on the data line and the first pattern; an active layer disposed on the first insulating layer and at least partially overlapping with the first pattern; a first gate insulating layer disposed on the active layer; and a first electrode disposed on the first gate insulating layer and overlapping with the active layer, wherein the first electrode does not overlap with the data line in a direction parallel to an upper surface of the first insulating layer.

A display apparatus includes a display area, a non-display area surrounding the display area, and a bending area formed in at least one side of the non-display area. The display apparatus includes a first glass substrate provided in the display area, a second glass substrate provided in the non-display area, an anti-etching member provided to overlap the bending area, and a link line portion formed on the anti-etching member and formed to overlap the non-display area.

The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.