A display device includes pixels including a first pixel and a second pixel sequentially disposed in a first direction, each including sub-pixels including a first electrode, a second electrode, and a light emitting element, a driving circuit including driving elements between the pixels, pixel lines connected to the pixels, and driving lines connected to the driving elements. The driving lines are in an area between the first pixel and the second pixel, and include a first driving line extending in a second direction intersecting the first direction in the area between the first pixel and the second pixel. First electrodes included in the sub-pixels of the first pixel and first electrodes included in the sub-pixels of the second pixel are spaced apart by a distance equal to or greater than a width of the first driving line in the first direction, and do not overlap the first driving line.

A light emitting device includes: a base layer; a first conductive layer on the base layer, and including first and second electrode patterns, and exposing a portion of the base layer at a first area between the first and second electrode patterns; a fine light emitting diode (LED) at the first area; a second conductive layer covering the second electrode pattern and a first side of the fine LED, and contacting the second electrode pattern and the first side of the fine LED; a first insulation layer on the second conductive layer and the fine LED, and partially exposing a second side of the fine LED; and a third conductive layer covering the first electrode pattern and the second side of the fine LED and a portion of a sidewall of the insulation layer, and contacting the first electrode pattern and the second side of the fine LED.

The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.

A display device includes a silicon wafer including digital circuits, a micro-light emitting diode (micro-LED) wafer including an array of micro-LEDs, and an indium-gallium-zinc-oxide (IGZO) layer between the silicon wafer and the micro-LED wafer and including analog circuits. The digital circuits are characterized by a first operating supply voltage and are configured to generate digital control signals based on digital display data of an image frame. The analog circuits are characterized by a second operating supply voltage higher than the first operating supply voltage. The analog circuits includes analog storage devices configured to storing analog signals, and transistors controlled by the digital control signals and the analog signals to generate drive currents for driving the array of micro-LEDs. The digital circuits on the silicon wafer or the analog circuits in the IGZO layer include level-shifting circuits at interfaces between the digital circuits and the analog circuits.

A display device includes a substrate that includes a display area and a peripheral area, a transistor in the display area, a pixel electrode connected to the transistor, a common electrode that overlaps the pixel electrode, and an organic insulation layer that is between the common electrode and the substrate, and overlaps at least a part of the peripheral area, wherein a thickness of a portion of the organic insulation layer overlapping the display area, and a thickness of a portion of the organic insulation layer overlapping the peripheral area, are different from each other, and the organic insulation layer includes a valley that penetrates the organic insulation layer, while overlapping the peripheral area.

A display device includes a substrate that includes a display area and a peripheral area, a transistor in the display area, a pixel electrode connected to the transistor, a common electrode that overlaps the pixel electrode, and an organic insulation layer that is between the common electrode and the substrate, and overlaps at least a part of the peripheral area, wherein a thickness of a portion of the organic insulation layer overlapping the display area, and a thickness of a portion of the organic insulation layer overlapping the peripheral area, are different from each other, and the organic insulation layer includes a valley that penetrates the organic insulation layer, while overlapping the peripheral area.

A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

An optoelectronic module (100) is defined, comprising at least one semiconductor chip (10) provided for emitting electromagnetic radiation and at least one holding device (20) which is adapted to fix in place a device (50) for encoding at least one optical or electronic parameter of the optoelectronic module (100). Furthermore, a process for the production of the optoelectronic module (100) is defined.

An optoelectronic module (100) is defined, comprising at least one semiconductor chip (10) provided for emitting electromagnetic radiation and at least one holding device (20) which is adapted to fix in place a device (50) for encoding at least one optical or electronic parameter of the optoelectronic module (100). Furthermore, a process for the production of the optoelectronic module (100) is defined.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.