A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

A method of manufacturing a display apparatus includes performing a first repair process of detecting a first defective light emitting diode (LED) from among a plurality of LEDs provided on a sapphire substrate and removing the first defective LED; attaching the plurality of LEDs to electrode patterns of an interposer substrate and separating the sapphire substrate from the plurality of LEDs; and performing a second repair process of detecting a second defective LED among the plurality of LEDs attached to the electrode patterns and replacing the second defective LED.

A display device includes a first switching element including a second electrode and a first gate electrode, a second switching element including a third electrode connected with the first gate electrode, a third switching element including a fifth electrode connected with the second electrode, and sixth electrode, a fourth switching element including a seventh electrode connected with the second electrode, and an eighth electrode, a fifth switching element including a ninth electrode connected with the second electrode, and a tenth electrode, a first light emitting diode connected with the sixth electrode and the eighth electrode, a second light emitting diode connected with the eighth electrode and the sixth electrode, and a switch selectively connecting a common power source line with the sixth electrode or the eighth electrode. The first light emitting diode and the second light emitting diode have different polarities from each other with respect to a same direction.

A method of manufacturing a LED precursor and a LED precursor is provided. The LED precursor is manufactured by forming a monolithic growth stack having a growth surface and forming a monolithic LED stack on the growth surface. The monolithic growth stack comprises a first semiconducting layer comprising a Group III-nitride, a second semiconducting layer, and third semi-conducting layer. The second semiconducting layer comprises a first Group III-nitride including a donor dopant such that the second semiconducting layer has a donor density of at least 5×1018 cm-3. The second semiconducting layer has an areal porosity of at least 15% and a first in-plane lattice constant. The third semiconducting layer comprises a second Group III-nitride different to the first Group-III-nitride. The monolithic growth stack comprises a mesa structure comprising the third semiconducting layer such that the growth surface comprises a mesa surface of third semiconducting layer and a sidewall surface of the third semiconducting layer encircling the mesa surface. The sidewall surface of the third semiconducting layer is inclined relative to the mesa surface. The mesa surface of the third semiconducting layer has a second in-plane lattice constant which is greater than the first in-plane lattice constant.

A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

A lighting system includes an LED array having a plurality of LED pixels and a power controller. The power controller adjusts a supply voltage for powering the LED pixels based on one or more conditions of the LED array. The power controller may determine the supply voltage based on process data of the LED array. The power controller may adjust the supply voltage based on an operating temperature of the LED pixels and the amplitude of a current driving the LED pixels.

According to the present inventive concept, a display device includes a display panel in which a plurality of display modules are horizontally aligned in an M*N matrix, wherein each of the plurality of display modules includes: a mounting surface on which a plurality of inorganic light-emitting elements are mounted; a substrate including a back surface disposed opposite to the mounting surface; and a module heat-dissipation member in contact with the back surface of the substrate to dissipate heat generated in the substrate, wherein the display panel includes a panel heat-dissipation member which connects the respective module heat-dissipation members so as to dissipate heat between the respective module heat-dissipation members of the plurality of display modules.

A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material, in which a width of an upper end of the upper conductive material is greater than a width of the corresponding upper conductive material.

Disclosed are display panels and methods of fabricating the same. The display panel includes a base substrate having a pixel area and a peripheral area adjacent to the pixel area, a light emitting element on the base substrate to generate a first light and overlapping the pixel area, a light control layer on the light emitting element to convert the first light into a white light, and a color filter layer on the light control layer and includes a first color filter that allows penetration of the first light, a second color filter that allows penetration of a second light different from the first light, and a third color filter that allows penetration of a third light different from the first light and the second light.

An embodiment discloses an ultraviolet light-emitting device including: a light-emitting structure including a plurality of light-emitting portions disposed on a first conductive type semiconductor layer, the plurality of light-emitting portions including an active layer and a second conductive type semiconductor layer; a first contact electrode disposed on the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; a first cover electrode disposed on the first contact electrode; and a second cover electrode disposed on the second contact electrode, wherein the light-emitting structure includes an intermediate layer formed in an etched region through which the first conductive type semiconductor layer is exposed, the intermediate layer including a lower composition of aluminum than the first conductive type semiconductor layer, wherein the intermediate layer includes a first intermediate region disposed between the plurality of light-emitting portions, and a second intermediate region surrounding edges of the first conductive type semiconductor layer and connected to opposite ends of the plurality of first intermediate regions, wherein the first contact electrode includes a first sub-electrode disposed on the first intermediate region, and a second sub-electrode disposed on the second intermediate region.