A display includes a first sub-pixel that emits a first color light and a second sub-pixel that emits a second color light. The first sub-pixel includes a first anode pad electrode, a second anode pad electrode, a first cathode pad electrode, and a first light emitting element including a first sub-light emitting element disposed on the first anode pad electrode and the first cathode pad electrode, and a second sub-light emitting element disposed on the second anode pad electrode and the first cathode pad electrode. An area of the first cathode pad electrode is larger than an area of the first anode pad electrode or an area of the second anode pad electrode. The first sub-light emitting element and the second sub-light emitting element emit the first color light during different periods, and the first sub-light emitting element and the second sub-light emitting element emit a same color light.

A method for forming a common electrode is provided, including: a) providing a support substrate on which rest optoelectronic devices separated by trenches; b) forming a dielectric layer on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer, so as to uncover the flanks at a first section of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer, the metal layer remaining in the trenches forming the common electrode.

A display apparatus including: a plurality of display modules, each including a substrate and inorganic light emitting diodes mounted on a mounting surface of the substrate; a cover layer configured to cover the mounting surface of each of the display modules; and an adhesive layer arranged between the cover layer and the mounting surface of each of the display modules to cause the cover layer to adhere to the mounting surface of each of the display modules, wherein the adhesive layer includes a first region, disposed on a gap formed between the plurality of display modules, and a second region disposed on the mounting surface of each of the display modules, and wherein the adhesive layer includes a photosensitive material such that the first region of the adhesive layer is configured to undergo a photosensitive reaction based on an external light source.

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A light emitting element includes: a substrate including a first surface including a first region and a second region; a first semiconductor layered body on the first region, the first semiconductor layered body comprising a first light emitting layer and including: a first lateral surface, and a second lateral surface opposite to the first lateral surface; and a second semiconductor layered body on the second region, the second semiconductor layered body comprising a second light emitting layer and including: a first lateral surface facing the second lateral surface and located on a first semiconductor layered body side of the second semiconductor layered body, and a second lateral surface opposite to the first lateral surface and located on a side opposite the first semiconductor layered body side of the second semiconductor layered body.

A chip structure, a manufacturing method thereof, and a display device are provided. The chip structure comprises a substrate, a micro light-emitting diode and a drive transistor arranged on the substrate, wherein a first pole of the drive transistor is coupled to a first electrode of the micro light-emitting diode.

A chip structure, a manufacturing method thereof, and a display device are provided. The chip structure comprises a substrate, a micro light-emitting diode and a drive transistor arranged on the substrate, wherein a first pole of the drive transistor is coupled to a first electrode of the micro light-emitting diode.

A light-emitting element contains negative ions and positive ions, and includes a solid ionic layer, a layer containing quantum dots, and a cathode electrode and an anode electrode. The ionic layer includes a p-type doped region on the anode electrode side containing the negative ions in a higher quantity than the positive ions, an n-type doped region on the cathode electrode side containing the positive ions in a higher quantity than the negative ions, and a junction region between the p-type doped region and the n-type doped region. The layer containing the quantum dots is adjacent to the junction region. Alternatively, the quantum dots are contained in the junction region. Alternatively, the quantum dots are adjacent to the junction region.

An embodiment of the present invention provides an element transferring method that may increase a yield of transferring an element, and an electronic panel manufacturing method using the same. The element transferring method includes: preparing a carrier film in which a first surface of an element on which a terminal is formed is adhered to an adhesive surface; providing a cover adhesive layer on the adhesive surface so that the second surface of the element that is opposite to the first surface and where the terminal is not formed is covered; transferring the element to the target substrate by adhering the cover adhesive layer to the target substrate while the second surface is facing the target substrate; and separating the carrier film from the element, wherein in transferring the element, the carrier film is pressed so that the surface of the cover adhesive layer is flat at the same height as the terminal.