An electronic device includes a first superconducting wire (with a first end and a second end) having a first threshold superconducting current. The device includes a second superconducting wire (with a first end and a second end) having a second threshold superconducting current that is less than the first threshold superconducting current. The second end of the first superconducting wire and the second end of the second superconducting wire are coupled to a common voltage node. A resistor is coupled between the first superconducting wire and the second superconducting wire, with a first end of the resistor coupled to the first end of the first superconducting wire and a second end of the resistor coupled to the first end of the second superconducting wire. The device includes a current source coupled with the first superconducting wire, and coupled with a combination of the resistor and the second superconducting wire.

An electronic device includes a first superconducting wire (with a first end and a second end) having a first threshold superconducting current. The device includes a second superconducting wire (with a first end and a second end) having a second threshold superconducting current that is less than the first threshold superconducting current. The second end of the first superconducting wire and the second end of the second superconducting wire are coupled to a common voltage node. A resistor is coupled between the first superconducting wire and the second superconducting wire, with a first end of the resistor coupled to the first end of the first superconducting wire and a second end of the resistor coupled to the first end of the second superconducting wire. The device includes a current source coupled with the first superconducting wire, and coupled with a combination of the resistor and the second superconducting wire.

A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

A method is presented for constructing conductive bridging random access memory (CBRAM) stacks. The method includes forming a plurality of conductive lines within an interlayer dielectric (ILD), forming a CBRAM stack including at least an electrolyte layer, a conductive layer, a metal cap layer, and a top electrode such that a top end of the CBRAM stack has a smaller critical dimension than a bottom end of the CBRAM stack, forming a low-k dielectric layer over the CBRAM stack, and exposing a top surface of the CBRAM stack during a via opening.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.

InGaN layers characterized by an in-plane lattice constant within a range from 3.19 to 3.50 are disclosed. The InGaN layers are grown by coalescing InGaN grown on a plurality of GaN regions. The InGaN layers can be used to fabricate optical and electronic devices for use in light sources for illumination and display applications.

A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.