The present invention provides methods and systems for manufacturing process control of photovoltaic products. Some embodiments relate to a method for tracking wafers for photovoltaic products with respect to which production tool processed them and their position within that production tool. Some embodiments relate to measuring and characterizing the critical-to-quality parameters of the partially-finished photovoltaic products emerging from the production tool in question. Some embodiments relate to display and visualization of the measured parameters on a computer screen, such that the parameters of each production unit can be directly observed in the context of which production tools processed them, which location within a specific production tool they were located in during processing, and which batch, or in the case of continuous processing, what time, the unit(s) was/where processed.

A method of manufacturing a semiconductor device includes providing a substrate structure. The substrate structure includes a conductive layer and a plurality of nanopillars spaced apart from each other overlying the conductive layer. Each nanopillar includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer have different conductivity types. The method also includes forming a graphene layer overlying the plurality of nanopillars. The graphene layer is connected to each of the plurality of nanopillars.

A method of manufacturing a semiconductor device includes providing a substrate structure. The substrate structure includes a conductive layer and a plurality of nanopillars spaced apart from each other overlying the conductive layer. Each nanopillar includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer have different conductivity types. The method also includes forming a graphene layer overlying the plurality of nanopillars. The graphene layer is connected to each of the plurality of nanopillars.

A method of fabricating a four junction solar cell having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

The interaction of elementary particles, in particular neutrinos of any kind and/or electromagnetic waves and/or gravitation, hereinafter referred to as kinetic energy of radiations, such as non-visible spectrum of solar or space radiation with metallic and/or non-metallic structures, in particular a film which is made of metal, a metal alloy or an electrically conductive plastic and which has a non-metallic nano-coating.

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

The present invention relates to a solar panel to which a high-damping stacked reinforcement part is applied and, more specifically, to a solar panel to which a high-damping stacked reinforcement part is applied, comprising: a power generation unit for generating electrical energy; a coupling part to which the power generation unit is coupled, and which has a circuit formed therein; and a reinforcement part for reinforcing the rigidity of the coupling part and damping vibration to be transmitted, and thus the present invention can prevent the power generation unit from being damaged by vibration, or the solar panel from inducing wobbling of a satellite by failing to damp the vibration.

A photovoltaic unit that includes a biological interface for sensing an electrical signal from the biological tissue, the biological interface including a multilayered piezoelectric amplifier including a composite impulse generating layer including a matrix of a piezo polymeric material and dispersed phases including piezo nanocrystals and carbon nanotubes. The photovoltaic unit also includes a transducer structure comprising a fiber substrate having quantum dots present on a receiving end of the fiber. The receiving end of the fiber receiving the electrical signal. The quantum dots converts the electrical signal to a light signal.

A method of forming a high voltage optical transformer includes forming a via through a transparent carrier wafer, forming a conductive layer within the via, bonding a solid state lighting (SSL) package to a first side of the carrier wafer, and bonding a photovoltaic (PV) wafer to a second side of the carrier wafer opposite to the first side. The photovoltaic wafer may include an active area and a conductive area located outside of the active area that is in electrical contact with the conductive layer. The method further includes forming both an SSL contact with the solid state lighting package and a PV contact with the conductive layer on the same side of the carrier wafer.