A device is provided that comprises a first layer deposited onto a second layer. The second layer comprises a lightly doped n-type or p-type semiconductor drift layer, and the first layer comprises a high-k material with a dielectric constant that is at least two times higher than the value of the second layer. A metal Schottky contact is formed on the first layer and a metal ohmic contact is formed on the second layer. Under reverse bias, the dielectric constant discontinuity leads to a very low electric field in the second layer, while the electron barrier created by the first layer stays almost flat. Under forward bias, electrons flow through the first layer, into the metal ohmic contact. For small values of conduction band offset or valence band offset between the first layer and the second layer, the device is expected to support efficient electron or hole transport.

A device is provided that comprises a first layer deposited onto a second layer. The second layer comprises a lightly doped n-type or p-type semiconductor drift layer, and the first layer comprises a high-k material with a dielectric constant that is at least two times higher than the value of the second layer. A metal Schottky contact is formed on the first layer and a metal ohmic contact is formed on the second layer. Under reverse bias, the dielectric constant discontinuity leads to a very low electric field in the second layer, while the electron barrier created by the first layer stays almost flat. Under forward bias, electrons flow through the first layer, into the metal ohmic contact. For small values of conduction band offset or valence band offset between the first layer and the second layer, the device is expected to support efficient electron or hole transport.

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

The present invention provides a photodiode and a display screen. The photodiode includes a first electrode and a second electrode in order. When a direction of an incident light of the photodiode is a first direction, a material of the first electrode is a transparent conductive material, and a material of the second electrode is a metal material. When the direction of the incident light of the photodiode is a second direction, the second electrode is made of a transparent conductive material, and the first electrode is made of a metal material.

A detector includes a substrate including a matrix of aramid nanofibers, a distribution of nanoparticles across the matrix of aramid nanofibers, and a plurality of organic capping ligands. Each organic capping ligand of the plurality of organic capping ligands bonds a respective nanoparticle of the plurality of nanoparticles to a respective aramid nanofiber of the matrix of aramid nanofibers. The detector further includes first and second electrodes disposed along opposite sides of the substrate to capture charges generated by photons or particles incident upon the detector. Each nanoparticle of the plurality of nanoparticles has a semiconductor composition.

A semiconductor device includes n semiconductor chips stacked via electrical contacting means in the silicon substrate thickness direction, n being an integer larger than 2, a side face of the stacked semiconductor device in the substrate thickness direction being covered by a non-conductive layer. The shape of the side face with respect to a plan view of the stacked semiconductor device may be one of curved, convex, concave or circular.

An optical receiver (100) for detection of light from one or more sources (108) comprises an opaque layer (102) disposed on a first surface. An aperture (104) is formed in the opaque layer. An optical detector (106) has a detection region disposed on a second surface. The first and second surfaces are spaced apart from one another such that light passing through the aperture (104) illuminates a corresponding illumination region (110) on the second surface, and is detected by the optical detector (106) In the event that the detection region overlaps the illumination region. Multiple apertures may be formed in the opaque layer, and/or multiple optical detectors may be disposed on the second surface. The optical receiver may thereby enable optical signals originating at different locations to be detected, and distinguished, over a wide field of view.

An optoelectronic component for generating and radiating an electromagnetic signal exhibiting a frequency lying between 30 GHz and 10 THz referred to as a microwave frequency, comprises: a planar guide configured to confine and propagate freely in a plane XY a first and a second optical wave exhibiting an optical frequency difference, referred to as a heterodyne beat, equal to the microwave frequency, a system for injecting the optical waves into the planar guide, a photo-mixer coupled to the planar guide to generate, on the basis of the first optical wave and of the second optical wave, a signal exhibiting the microwave frequency, the photo-mixer having an elongated shape exhibiting along an axis Y a large dimension greater than or equal to half the wavelength of the signal, the injection system configured so that the optical waves overlap in the planar guide and are coupled with the photo-mixer over a length along the axis Y at least equal to half the wavelength of the signal, the photo-mixer thus being able to radiate the signal.

An optoelectronic component for generating and radiating an electromagnetic signal exhibiting a frequency lying between 30 GHz and 10 THz referred to as a microwave frequency, comprises: a planar guide configured to confine and propagate freely in a plane XY a first and a second optical wave exhibiting an optical frequency difference, referred to as a heterodyne beat, equal to the microwave frequency, a system for injecting the optical waves into the planar guide, a photo-mixer coupled to the planar guide to generate, on the basis of the first optical wave and of the second optical wave, a signal exhibiting the microwave frequency, the photo-mixer having an elongated shape exhibiting along an axis Y a large dimension greater than or equal to half the wavelength of the signal, the injection system configured so that the optical waves overlap in the planar guide and are coupled with the photo-mixer over a length along the axis Y at least equal to half the wavelength of the signal, the photo-mixer thus being able to radiate the signal.

An imaging panel (10) is provided that generates an image based on scintillation light obtained from X-ray having passed through an object. The imaging panel (10) includes: a substrate (40); a plurality of conversion elements (15) converting the scintillation light into charges; an insulating film (45, 46) having a plurality of conductive portions (47) that reach the conversion elements (15), respectively; and bias lines (16) formed on the insulating film (45, 46) so as to cover the conductive portions (47), the bias lines (16) being connected to the conversion elements (15) through the conductive portions (47), respectively, and supplying a bias voltage to the conversion elements (15). A dimension of each of the conductive portions (47) in a direction in which the bias lines (16) extend is greater than a dimension of each of the conductive portions (47) in a width direction of the bias lines (16).