An optical radiation detection system (100) comprising: an optical medium (1) structured to define a region (5) suitable for transmitting an optical radiation and being associated to at least one electric parameter varying as a function of the optical radiation concerning said region; at least one electrode (2, 3) electrically coupled to the optical medium (1), and spaced from said region (5), an electric power generator (4) connected to said at least one electrode (2) and structured to provide an electric signal (Se) to be applied to the optical medium. Further, the system comprises an electric measuring circuit (50) connected to said at least one electrode (2) and structured to provide a measuring electric signal (SM) representing a variation of said at least one electric parameter.

An optical radiation detection system (100) comprising: an optical medium (1) structured to define a region (5) suitable for transmitting an optical radiation and being associated to at least one electric parameter varying as a function of the optical radiation concerning said region; at least one electrode (2, 3) electrically coupled to the optical medium (1), and spaced from said region (5), an electric power generator (4) connected to said at least one electrode (2) and structured to provide an electric signal (Se) to be applied to the optical medium. Further, the system comprises an electric measuring circuit (50) connected to said at least one electrode (2) and structured to provide a measuring electric signal (SM) representing a variation of said at least one electric parameter.

The present invention relates to a metal-metal interdigitated photoconductive antenna that generates and/or detects terahertz waves, the photoconductive antenna comprising at least one substrate (1) and at least one electrode (2) on the front face of the substrate (1), wherein said photoconductive antenna comprises at least one layer (4) formed of a material reflective to terahertz waves, said layer (4) extending below the front face of the substrate (1) at a distance lower than the wavelength; and it comprises an interdigitated geometry on said front face of the substrate (1) comprising a first metallization layer of 5 nm Cr and 150 nm Au for the interdigitated electrodes (2), equally spaced by a distance Δ, is made on said front face of the substrate (1); a 500 nm-thick layer of SiO.sub.2 (5) deposited over the first metallization layer; and a second metallic layer composed of metallic fingers (6) covering gaps with a periodicity double that of the distance Δ.

Metal-oxide-semiconductor (MOS) transistors with reduced subthreshold conduction, and methods of fabricating the same. Transistor gate structures are fabricated in these transistors of a shape and dimension as to overlap onto the active region from the interface between isolation dielectric structures and the transistor active areas. Minimum channel length conduction is therefore not available at the isolation-to-active interface, but rather the channel length along that interface is substantially lengthened, reducing off-state conduction.

One feature pertains to a microdosimeter cell array that includes a plurality of microdosimeter cells each having a semiconductor volume adapted to generate a current in response to incident radiation. The semiconductor volumes of each of the plurality of microdosimeter cells have at least one of a size, a shape, a semiconductor type, and/or a semiconductor doping type and concentration that is associated with one or more cells or cell components of a human eye. A processing circuit is also communicatively coupled to the microdosimeter cell array and generates a signal based on the currents generated by the semiconductor volumes of the plurality of microdosimeter cells. The signal generated by the processing circuit is indicative of an amount of radiation absorbed by the microdosimeter cell array.

One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.

A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 10.sup.12 cm.sup.−3 at 300K.

Disclosed is a semiconductor device includes a substrate provided with a plurality of pixel electrodes and a control electrode, a functional layer provided over the plurality of pixel electrodes, a transparent electrode provided over the functional layer, an insulating layer provided so as to cover an upper surface and a side surface of a laminate including the functional layer and the transparent electrode and having a first opening reaching the transparent electrode, and a light-shielding conductive layer connected to the transparent electrode via the first opening and constituting at least a part of an electrical path connecting the transparent electrode and the control electrode.

Disclosed herein is radiation detector comprising: a radiation absorption layer configured to generate electric signals by absorbing radiation particles; an electronics layer comprising an electronic system configured to process or interpret the signals; a flexible PCB configured to receive output from the electronic system; wherein the radiation absorption layer and the flexible PCB are mounted on a same side of the electronics layer.

A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.