A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

A semiconductor optical integrated device according to the present invention includes a conductive substrate, a laser provided to the conductive substrate, a semi-insulating semiconductor layer provided on the conductive substrate, a photodiode provided on the semi-insulating semiconductor layer and a waveguide that is provided on the conductive substrate and guides output light of the laser to the photodiode, wherein an anode of the photodiode and a cathode of the photodiode are drawn from an upper surface side of the photodiode, and the waveguide and the photodiode are separated from each other by the semi-insulating semiconductor layer.

A semiconductor optical integrated device according to the present invention includes a conductive substrate, a laser provided to the conductive substrate, a semi-insulating semiconductor layer provided on the conductive substrate, a photodiode provided on the semi-insulating semiconductor layer and a waveguide that is provided on the conductive substrate and guides output light of the laser to the photodiode, wherein an anode of the photodiode and a cathode of the photodiode are drawn from an upper surface side of the photodiode, and the waveguide and the photodiode are separated from each other by the semi-insulating semiconductor layer.

The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

A light source package structure is provided. The light source package structure includes a substrate, an upper electrode layer, a light emitting unit, a photodiode, a surrounding wall, a light permeable element, and a coating layer. The substrate includes a first surface and a second surface that is opposite to the first surface. The upper electrode layer is disposed on the first surface of the substrate. The light emitting unit and the photodiode both are disposed on the upper electrode layer. The surrounding wall is disposed on the first surface and is arranged to surround the light emitting unit and the photodiode. The light permeable element is disposed on the surrounding wall. The coating layer is disposed inside of the surrounding wall and is coated on a part of the first surface and a part of the upper electrode layer.

A flexible semiconductor device including a light-emitting element and a sensor element is provided. The semiconductor device includes a sensor device, a processor, and a communication device. The sensor device includes a first pixel and a second pixel formed over a flexible substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. Light emitted from the light-emitting element has a peak wavelength. A range of wavelength sensed by the sensor element includes the peak wavelength. A semiconductor layer of the first transistor and a semiconductor layer of the second transistor include the same element. A pixel electrode of the light-emitting element has a function of being electrically connected to the first transistor and a function of blocking diffusion light to the sensor element.

An optical sensor device includes a substrate, a light-receiving element, a light-emitting element, a first transparent substrate, and a second transparent substrate. The substrate includes a first opening, and a second opening at a distance from the first opening. The light-receiving element is in the first opening. The light-emitting element is in the second opening, and at a distance from the light-receiving element. The first transparent substrate is placed on an upper surface of the substrate and bonded to the substrate to close the first opening and the second opening. The second transparent substrate is placed on an upper surface of the first transparent substrate.

A chip package assembly and method for fabricating the same are provided which incorporate phase change materials within the chip package assembly for improved thermal management. In one example, a chip package assembly is provided that includes a substrate, a first integrated circuit (IC) die stacked on the substrate, a dielectric filler layer, a cover and a phase change material. The phase change material is sealed within a recess formed between the first IC dies and the cover.

A display device is provided. The display device includes a display panel that has a display region. The display device also includes at least one image sensor that overlaps with the display region. The at least one image sensor includes a light-sensing element and at least one light-receiving element disposed on the light-sensing element.