Photo-emitting and/or photo-receiving diode array device, comprising: a stack of first and second semiconductor layers doped according to different types; first trenches passing through the stack and surrounding a region of the stack wherein several diodes are formed; dielectric portions arranged in the first trenches and covering lateral flanks of said region over the entire thickness of the second layer and a first part of the thickness of the first layer; first electrically conductive portions arranged in the first trenches and covering the lateral flanks of said region over a second part of the thickness of the first layer, and forming first electrodes of the diodes of said region; at least one second trench partially passing through the first layer and separating the portions of the first layer from the diodes of said region.

A process of overlay offset measurement includes providing a substrate; forming a first pattern layer with a predetermined first pattern on the substrate; forming a first photoresist layer on the substrate and the first pattern layer; forming a second photoresist layer on the first photoresist layer; forming a second pattern layer with a predetermined second pattern on the second photoresist layer; patterning the second photoresist layer to form a trench having a predetermined third pattern being substantially aligned with the predetermined first pattern of the first pattern layer; and performing overlay offset measurement according to the second pattern layer and the trench.

An optical sensor includes a graphene layer, a first electrode and a second electrode that are connected to the graphene layer, and an enhancement layer. The enhancement layer is disposed below the graphene layer to enhance the intensity of an optical electric field by surface plasmon resonance. The first electrode and the second electrode are arranged parallel to a first direction. The intensity of the optical electric field enhanced by the enhancement layer is greater on a first electrode side than on a second electrode side with respect to a centerline in the first direction of the graphene layer.

One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a front glass cover, a back glass cover, a plurality of photovoltaic structures positioned between the front and back glass covers, and a single encapsulant layer positioned between the front glass cover and the photovoltaic structures. A surface of the photovoltaic structures is in direct contact with the back glass cover.

Disclosed is a tandem solar cell according to an aspect including: a silicon lower cell; a perovskite upper cell disposed on the silicon lower cell; and a bonding layer for bonding the silicon lower cell and the perovskite upper cell between the silicon lower cell and the perovskite upper cell, wherein the front surface portion of the silicon lower cell being in contact with the bonding layer includes a texture structure, the bonding layer includes a first transparent electrode layer formed on the sidewall of the texture structure, a buried layer filling concave portions of the texture structure on the first transparent electrode layer, and a second transparent electrode layer on top surfaces of the buried layer, the first transparent electrode layer and the texture structure.

The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.

According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 μs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

First, first cell wiring members from the first solar cell and second cell wiring members from the second solar cell are sandwiched between a wiring member film and a second bridge wiring member. Subsequently, the first cell wiring members and the second cell wiring members are connected to the second bridge wiring member by applying heat to at least the first cell wiring members, the second cell wiring members, and the second bridge wiring member by induction heating.

First, first cell wiring members from the first solar cell and second cell wiring members from the second solar cell are sandwiched between a wiring member film and a second bridge wiring member. Subsequently, the first cell wiring members and the second cell wiring members are connected to the second bridge wiring member by applying heat to at least the first cell wiring members, the second cell wiring members, and the second bridge wiring member by induction heating.

Structured photovoltaic assemblies and method of manufacture therefor. The assemblies can be assembled similar to flex circuits and have mechanical support structures disposed within the assembly. The supports can be sized and shaped to one or a group of solar cells in the assembly. The solar cells supported by a particular support may be interconnected with cells supported by a different support. The supports can be transparent. The connection of the interconnects to the solar cells can be enhanced by forming protrusions in vias through openings in the Insulating layer that are aligned with the solar cells. Alternatively, the openings can be filled with a conductive material in such forms as powder, ink, paste, or metal nanoparticles, and a laser can be used to melt and/or sinter the material to form the connection to the solar cell. These techniques can withstand large temperature swings over a large number of cycles, which occur in, for example, space applications.