A phosphor is represented by a chemical formula of Lu.sub.(3-x-z)Mg.sub.xZn.sub.yAl.sub.(5-y)O.sub.12:Ce.sub.z, in which in a case where z is in a range of 0.01≤z≤0.03, x and y respectively satisfy 0<x≤1.4 and 0<y≤1.4, in a case where z is in a range of 0.03<z≤0.06, x and y respectively satisfy y<0.2 and 0.1≤x≤1.4, x<0.2 and 0.1≤y≤1.4, or x=0.2 and y=0.2, in a case where z is in a range of 0.06<z≤0.09, x and y respectively satisfy y<0.2 and 0.1≤x<1.4, or x<0.2 and 0.1≤y<1.4, and in a case where z is in a range of 0.09<z≤0.12, x and y respectively satisfy y<0.2 and 0.1≤x<0.9, or x<0.2 and 0.1≤y<0.9.

A red phosphor is expressed by a chemical formula of Ca.sub.zO:Ce.sub.x, Li.sub.y, in which a range of x values is 0<x<0.2, a range of y values is 0y<0.2, and a range of z values is 1xyz1x.

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

A light emitting device includes a substrate, and a laminated structure provided on the substrate, wherein the laminated structure has a plurality of columnar portions, the columnar portion contains a material having a wurtzite-type crystal structure, in a plan view as seen from a layered direction of the laminated structure, the plurality of columnar portions are arranged in a square lattice form or rectangular lattice form, a line passing through centers of the adjacent columnar portions is inclined relative to m-planes of the columnar portions located between the centers of the adjacent columnar portions, and vertices of the adjacent columnar portions are not placed on the line.

A spin-sensitive ultraviolet light-based device includes a p-type GaN layer; an n-type Gd doped ZnO nanostructure grown on the GaN layer; a first electrode formed on the GaN layer; and a second electrode formed on the Gd doped ZnO nanostructure. Electrons supplied through the first and second electrodes are spin-polarized by the Gd doped ZnO nanostructure. Polarized ultraviolet light emitted or received by the Gd doped ZnO nanostructure is correlated with the spin-polarized electrons.

The present disclosure provides an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm, and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm, and the ultra-high color rendering white light-emitting device has Ra that is equal to or higher than 98 and less than 100.

A light emitting device includes a substrate, and a laminated structure provided on the substrate, wherein the laminated structure has a plurality of columnar portions, the columnar portion contains a material having a wurtzite-type crystal structure, in a plan view as seen from a layered direction of the laminated structure, the plurality of columnar portions are arranged in a square lattice form or rectangular lattice form, a line passing through centers of the adjacent columnar portions is inclined relative to m-planes of the columnar portions located between the centers of the adjacent columnar portions, and vertices of the adjacent columnar portions are not placed on the line.

A light emitting device, a method of fabricating a light emitting device and a method of controlling light emission. The light emitting device includes a plasmonic structure. The plasmonic structure is configured to have a plurality of localized surface plasmon resonances. The light emitting device also includes a broadband light emitting layer having an emission spectrum substantially overlapping wavelengths of the localized surface plasmon resonances. A spacer layer is disposed between the plasmonic structure and the broadband light emitting layer. A color of light emitted by the broadband light emitting layer is tunable by the localized surface plasmon resonances of the plasmonic structure.

Methods of manufacturing a heterojunction bipolar transistor are described herein. An exemplary method can include providing a base/emitter stack, the base/emitter stack comprising a substrate, an etch stop layer over the substrate, an emitter contact layer over the etch stop layer, an emitter over the emitter contact layer, and/or a base over the emitter. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.