A method for homogenizing the height of a plurality of wires from the plurality of wires erected on a face of a substrate, the method including a first step of coating the face of the substrate including the plurality of wires with a first film, the first film embedding the plurality of wires over a first height; a second step of coating the first film with a second film, the second film embedding at least one part of the plurality of wires over a second height; a step of removing the second film, the part of the wires of the plurality of wires embedded in the second film being removed at the same time as the second film, a mechanical stress between the first film and the second film being exerted during the removal step.

A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, a plurality of disc-shaped light-emitting units, at least one disc-shaped light-emitting unit is disposed in at least one circular groove, and the at least one disc-shaped light-emitting unit includes an alignment element positioned on a top surface of the at least one disc-shaped light-emitting unit, a diameter of the at least one disc-shaped light-emitting unit is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the at least one disc-shaped light-emitting unit and the at least one rectangular groove satisfy the condition of (R+r)/2>(w.sup.2+H.sup.2).sup.1/2.

The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe.sub.1-.sub.xTe.sub.x core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe.sub.1-.sub.xTe.sub.x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.

A semiconductor light-emitting element supply device according to an embodiment of the present invention supplies semiconductor light-emitting elements in a fluid chamber in which self-assembly occurs, the semdconductor light-emitting element supply device comprising: a tray disposed in the fluid chamber; a transfer unit which includes a magnet and a magnet accommodating part for accommodating the magnet and which transfers the semiconductor light-emitting elements by using magnetic force; a supply unit disposed above the tray to supply the transferred semiconductor light-emitting elements to the tray; and a control unit for controlling operations of the tray, the transfer unit and the supply unit, wherein the control unit controls the position of the magnet accommodated in the magnet accommodating part so that the semiconductor light-emitting elements are adhered on one surface of the magnet accommodating part or the adhered semiconductor light-emittng elements are separated from the one surface of the magnet accommodating part.

A display device and a manufacturing method of the display device are provided. A display device includes a conductive line disposed on a substrate, a first capacitor electrode disposed on the conductive line and electrically connected to the conductive line, a passivation layer disposed on the first capacitor electrode, a first electrode disposed on the passivation layer and at least partially overlapping the first capacitor electrode in a plan view, a second electrode spaced apart from the first electrode, the second electrode and the first electrode being disposed on a same layer, and light emitting elements disposed between the first electrode and the second electrode.

A display device may include a substrate including pixel areas, and a pixel disposed in each of the pixel area. The pixel may include a transistor and a driving voltage line disposed in the substrate, first and second electrodes spaced apart from each other, a bank pattern disposed on the first and second electrodes, respectively, intermediate layers disposed on the bank pattern, light emitting elements disposed between two adjacent intermediate layers of the intermediate layers, a first contact electrode disposed on one of the two adjacent intermediate layers and electrically connected to an end of each of the light emitting elements, and a second contact electrode disposed on another one of the two adjacent intermediate layers and electrically connected to another end of each of the light emitting elements.

A display device is provided, a display device includes, a substrate including a first surface, a second surface opposite to the first surface, a first chamfered surface extending from one side of the first surface, a second chamfered surface extending from one side of the second surface, and a first side surface connecting the first chamfered surface and the second chamfered surface to each other, a first pad on the first surface, an upper via layer on the first surface and spaced from the first pad, and a first passivation layer partially covering the upper via layer, and defining a first exposure opening exposing one side of the upper via layer facing the first pad.

A substrate includes a base substrate, at least two bonding pads are arranged on the base substrate, the base substrate and an electronic element are bonded to each other through the at least two bonding pads, at least two pins are arranged on the electronic element, a protective layer is arranged at a side of the bonding pads away from the base substrate, and an opening region is arranged in the protective layer at each bonding pad, to expose partial surface of the bonding pad. A bonding combination layer made of a low-melting-point alloy material is arranged in the opening region, and the low-melting-point alloy material is capable of being melted at a first predetermined temperature, to enable the bonding pads and the pins to be bonded to each other.

Embodiments of the present disclosure relate to a transfer head assembly and an LED transfer apparatus, and more particularly, to a transfer head assembly and an LED transfer apparatus in which a plurality of pickup units picks up LEDs, which are adhered to the upper surfaces of the LEDs, and transfers the LEDs to a display substrate. According to the embodiments of the present disclosure, a large number of LEDs located on a wafer substrate or a carrier substrate can be transferred in bulk to a display substrate. Thus, it is possible to rapidly perform the transfer process of the LEDs.