Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

Provided is a method for producing a light emitting device, including the steps of providing an intermediate body including a precursor substrate including a base member that includes a top surface and a first bottom surface, a pair of first wiring portions on the top surface, and a pair of second wiring portions electrically connected with the pair of first wiring portions respectively and positioned between the top surface and the first bottom surface; and a light emitting element on the first wiring portions; removing a part of the base member off the first bottom surface of the base member to thin the base member so that a second bottom surface of the base member is formed; and forming a pair of external electrodes, to be electrically connected with the pair of second wiring portions respectively, on the second bottom surface.

Provided is a method for producing a light emitting device, including the steps of providing an intermediate body including a precursor substrate including a base member that includes a top surface and a first bottom surface, a pair of first wiring portions on the top surface, and a pair of second wiring portions electrically connected with the pair of first wiring portions respectively and positioned between the top surface and the first bottom surface; and a light emitting element on the first wiring portions; removing a part of the base member off the first bottom surface of the base member to thin the base member so that a second bottom surface of the base member is formed; and forming a pair of external electrodes, to be electrically connected with the pair of second wiring portions respectively, on the second bottom surface.

A light emitting module includes: a plurality of light emitting elements each having a primary light emitting surface and a lateral surface; a plurality of wavelength conversion members arranged respectively on the primary light emitting surfaces of the plurality of light emitting elements; and a lightguide plate having a first primary surface and a second primary surface and arranged continuously on the plurality of wavelength conversion members so that the second primary surface faces the plurality of wavelength conversion members, wherein the lightguide plate includes a plurality of recessed portions located on the second primary surface, and a lateral surface of at least one of the plurality of wavelength conversion members is partially in contact with an inner lateral surface of at least one of the plurality of recessed portions.

A light emitting module includes: a plurality of light emitting elements each having a primary light emitting surface and a lateral surface; a plurality of wavelength conversion members arranged respectively on the primary light emitting surfaces of the plurality of light emitting elements; and a lightguide plate having a first primary surface and a second primary surface and arranged continuously on the plurality of wavelength conversion members so that the second primary surface faces the plurality of wavelength conversion members, wherein the lightguide plate includes a plurality of recessed portions located on the second primary surface, and a lateral surface of at least one of the plurality of wavelength conversion members is partially in contact with an inner lateral surface of at least one of the plurality of recessed portions.

The present invention relates to a load arrangement for use in an electrical power arrangement and for arrangement at a first external electrically conductive element (5). The load arrangement comprises a load (2), a first electrode (3) electrically connected to the load (2), a dielectric layer (4) and a carrier carrying the load (2), the first electrode (3) and the dielectric layer (4). The load (2), the first electrode (3) and the dielectric layer (4) form a structure, which is configured for being arranged at the first external electrically conductive element (5). The first electrode (3) and the dielectric layer (4) are arranged to form, in combination with a first external electrically conductive element (5) representing an outer surface of a marine structure, a capacitor (6) for capacitive transmission of electrical power between the first electrode (3) and the first external element (5). The carrier is configured for being arranged at the first external electrically conductive element (5). The load (2) is connected to a second electrode (7) electrically insulated from the first electrode (3) or is arranged for being electrically connected to a second external electrically conductive element (10, 11) electrically insulated from the first electrode (3).