An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

A light-emitting device according to an embodiment of the present invention includes a substrate; a light-emitting structure provided on the substrate, and including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer provided between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode provided on the light-emitting structure; a first connecting electrode provided on the first electrode; a second electrode provided on the light-emitting structure; a second connecting electrode provided on the second electrode; and a support layer provided around the first electrode, the first connecting electrode, the second electrode and the second connecting electrode. The support layer includes a first support layer having a first coefficient of thermal expansion, and a second support layer provided on the first support layer and having a second coefficient of thermal expansion.

A light-emitting device according to an embodiment of the present invention includes a substrate; a light-emitting structure provided on the substrate, and including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer provided between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode provided on the light-emitting structure; a first connecting electrode provided on the first electrode; a second electrode provided on the light-emitting structure; a second connecting electrode provided on the second electrode; and a support layer provided around the first electrode, the first connecting electrode, the second electrode and the second connecting electrode. The support layer includes a first support layer having a first coefficient of thermal expansion, and a second support layer provided on the first support layer and having a second coefficient of thermal expansion.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

The invention provides a manufacturing method of micro LED display panel and micro LED display panel. In the manufacturing method, an elastic conductive layer is formed on the upper pixel electrode on the package substrate. When the package substrate and the driving substrate are assembled, the upper pixel electrode and the upper electrode of the micro LED are electrically connected through the elastic conductive layer, and the elasticity of the elastic conductive layer is utilized to fill the height difference between the individual micro LEDs, avoid poor connection between the upper pixel electrode and the upper electrode of the micro LED, and improve the assembling effect of the micro LED display panel and the process yield of the micro LED display panel.

The invention provides a manufacturing method of micro LED display panel and micro LED display panel. In the manufacturing method, an elastic conductive layer is formed on the upper pixel electrode on the package substrate. When the package substrate and the driving substrate are assembled, the upper pixel electrode and the upper electrode of the micro LED are electrically connected through the elastic conductive layer, and the elasticity of the elastic conductive layer is utilized to fill the height difference between the individual micro LEDs, avoid poor connection between the upper pixel electrode and the upper electrode of the micro LED, and improve the assembling effect of the micro LED display panel and the process yield of the micro LED display panel.

A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surface of the GaN-based semiconductor structure and on an entire side surface of the GaN-based semiconductor structure, in which a first part formed on the upper surface of the GaN-based semiconductor structure in the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode, and a second part formed on the entire side surface of the GaN-based semiconductor structure in the insulating layer does not contact the n-type electrode.