Embodiments provide a light emitting diode and a method of fabricating the same. The light emitting diode includes a base, a light emitting structure disposed on the base, at least one first electrode disposed on the light emitting structure; and a second electrode disposed under the light emitting structure, wherein at least a portion of the second electrode is covered by the base and the base includes a supporting insulator and at least one bulk electrode embedded in the supporting insulator and electrically connected to the light emitting structure, and a surface of the at least one bulk electrode is exposed through the supporting insulator. The light emitting diode has excellent reliability and efficiency.

Embodiments provide a light emitting diode and a method of fabricating the same. The light emitting diode includes a base, a light emitting structure disposed on the base, at least one first electrode disposed on the light emitting structure; and a second electrode disposed under the light emitting structure, wherein at least a portion of the second electrode is covered by the base and the base includes a supporting insulator and at least one bulk electrode embedded in the supporting insulator and electrically connected to the light emitting structure, and a surface of the at least one bulk electrode is exposed through the supporting insulator. The light emitting diode has excellent reliability and efficiency.

An optical sensor includes a flexible substrate, a light emitting element, and a light receiving element. The light emitting element and the light receiving element are mounted on element mounting portions and connected to element connection portions by wires. The optical sensor also includes through wirings extending through the substrate. Each through wiring is bonded to the element mounting portion or the element connection portion. The through wirings include a heat radiation through wiring that is located immediately below the light emitting element and bonded to the element mounting portion on which the light emitting element is mounted. The optical sensor further includes light shielding materials and encapsulation resins for surrounding and encapsulating the light emitting element and the light receiving element, respectively.

An optical sensor includes a flexible substrate, a light emitting element, and a light receiving element. The light emitting element and the light receiving element are mounted on element mounting portions and connected to element connection portions by wires. The optical sensor also includes through wirings extending through the substrate. Each through wiring is bonded to the element mounting portion or the element connection portion. The through wirings include a heat radiation through wiring that is located immediately below the light emitting element and bonded to the element mounting portion on which the light emitting element is mounted. The optical sensor further includes light shielding materials and encapsulation resins for surrounding and encapsulating the light emitting element and the light receiving element, respectively.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

The embodiment relates to a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. According to the embodiment, a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first electrode electrically connected with the first conductive semiconductor layer, a second electrode electrically connected with the second conductive semiconductor layer, an insulating member provided on the light emitting structure while exposing the first electrode and the second electrode, a third electrode provided on the first electrode, and a fourth electrode provided on the second electrode. The third electrode includes a first part of the third electrode directly making contact with the first electrode and a second part of the third electrode, which is provided on the first part of the third electrode and has a horizontal width wider than the first part of the third electrode, and the fourth electrode includes a first part of the fourth electrode directly making contact with the second electrode and a second part of the fourth electrode, which is provided on the first part of the fourth electrode and has a horizontal width wider than the first part of the fourth electrode. The light extraction efficiency and the heat radiation characteristic may be improved, and the reliability may be improved.

The embodiment relates to a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. According to the embodiment, a light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first electrode electrically connected with the first conductive semiconductor layer, a second electrode electrically connected with the second conductive semiconductor layer, an insulating member provided on the light emitting structure while exposing the first electrode and the second electrode, a third electrode provided on the first electrode, and a fourth electrode provided on the second electrode. The third electrode includes a first part of the third electrode directly making contact with the first electrode and a second part of the third electrode, which is provided on the first part of the third electrode and has a horizontal width wider than the first part of the third electrode, and the fourth electrode includes a first part of the fourth electrode directly making contact with the second electrode and a second part of the fourth electrode, which is provided on the first part of the fourth electrode and has a horizontal width wider than the first part of the fourth electrode. The light extraction efficiency and the heat radiation characteristic may be improved, and the reliability may be improved.

A light emitting device array is provided. The light emitting device array comprises a light emitting stack, a first electrical contact layer, an array of second electrical contacts, and an anti-reflection layer. The light emitting stack has a light emitting surface and a contact surface. The light emitting surface and the contact surface define opposing sides of the light emitting stack. The light emitting stack comprises a plurality of Group III-nitride layers including a first semiconducting layer provided towards the light emitting surface of the light emitting stack, a second semiconducting layer provided towards the contact surface, and an active layer arranged between the first semiconducting layer and the second semiconducting layer, the active layer configured to generate light having a first wavelength. The light emitting surface and the contact surface are parallel to each other and aligned with the plurality of Group III-nitride layers. The first electrical contact layer is provided on the light emitting stack and is configured to be in electrical contact with the first semiconducting layer. The array of second electrical contacts is provided on the contact surface of the light emitting stack. Each second electrical contact defines a light emitting device between the first semiconducting layer and the second electrical contact. Each of the second electrical contacts is spaced apart from the other second electrical contacts to form a two-dimensional array of light emitting devices. The anti-reflection layer is provided on the light emitting surface. The anti-reflection layer is configured to increase a light extraction efficiency of the light generated by the light emitting stack.

According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.