A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

A light-emitting device includes a light-emitting element having an upper surface serving as a light-extracting surface, a first light-transmissive member bonded to the upper surface of the light-emitting element and including an inorganic material as a main component and a wavelength conversion member, and a second light-transmissive member bonded to an upper surface of the first light-transmissive member and including an inorganic material as a main component. A periphery of a lower surface of the first light-transmissive member is located outward of a periphery of the upper surface of the light-emitting element in a plan view. A periphery of an upper surface of the second light-transmissive member is located inward of a periphery of the upper surface of the first light-transmissive member in the plan view.

A light-emitting device includes a light-emitting element having an upper surface serving as a light-extracting surface, a first light-transmissive member bonded to the upper surface of the light-emitting element and including an inorganic material as a main component and a wavelength conversion member, and a second light-transmissive member bonded to an upper surface of the first light-transmissive member and including an inorganic material as a main component. A periphery of a lower surface of the first light-transmissive member is located outward of a periphery of the upper surface of the light-emitting element in a plan view. A periphery of an upper surface of the second light-transmissive member is located inward of a periphery of the upper surface of the first light-transmissive member in the plan view.

Provided are a semiconductor light-emitting device capable of easily adjusting the light intensity of output light and a method for producing such a semiconductor light-emitting device. The semiconductor light-emitting device includes: a substrate; a light-emitting element mounted on the substrate; and a seal layer provided on the substrate so as to cover the light-emitting element. The seal layer contains resin and inorganic pigment particles. The inorganic particles have an average particle size of 1 m or larger and 50 m or smaller in a volumetric basis particle size distribution by a laser diffraction scattering particle size distribution measurement method. The inorganic particles distributed at a concentration becoming thicker in a direction toward said substrate.

Provided are a semiconductor light-emitting device capable of easily adjusting the light intensity of output light and a method for producing such a semiconductor light-emitting device. The semiconductor light-emitting device includes: a substrate; a light-emitting element mounted on the substrate; and a seal layer provided on the substrate so as to cover the light-emitting element. The seal layer contains resin and inorganic pigment particles. The inorganic particles have an average particle size of 1 m or larger and 50 m or smaller in a volumetric basis particle size distribution by a laser diffraction scattering particle size distribution measurement method. The inorganic particles distributed at a concentration becoming thicker in a direction toward said substrate.

A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.

A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.

Provided are a display panel, a manufacturing method thereof and a display device. The display panel includes: a first substrate and a second substrate disposed opposite to each other, and a plurality of light-emitting units and a plurality of fingerprint identification units, disposed on one side of the first substrate facing to the second substrate. Each of the plurality of light-emitting units includes a first N-type semiconductor layer and a first P-type semiconductor layer, each of the plurality of fingerprint identification units includes a second N-type semiconductor layer and a second P-type semiconductor layer. The first N-type semiconductor layer and the second N-type semiconductor layer are disposed in a same layer, and the first P-type semiconductor layer and the second P-type semiconductor layer are disposed in a same layer.

An embodiment discloses a semiconductor element comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer arranged between the second conducive semiconductor layer and the active layer, wherein the section of the first conductive semiconductor layer decreases in a first direction, the electron blocking layer has an area in which the section thereof increases in the first direction, and the first direction is defined from the first conductive semiconductor layer to the second conductive semiconductor layer.