The present disclosure provides RGB-LED packaging modules and a display screen including a substrate; a plurality of light-emitting units disposed on the substrate, each light-emitting unit including a set of RGB-LED chips; a plastic layer provided on the light-emitting units; and a virtual isolating region provided between the light-emitting units, the virtual isolating region including a black light-absorbing layer provided on the substrate. The present disclosure makes use of the black light-absorbing layer to absorb light which may cause interference among the light-emitting units. By providing the virtual isolating region and an isolating trough, and utilizing the difference of refractive index of packaging plastic and refractive index of air, light emitted by the light-emitting units can be reflected to reduce the influence of adjacent light-emitting units. A black isolating-frame is filled in the isolating trough to minimize the interference among the light-emitting units.

The present disclosure provides RGB-LED packaging modules and a display screen including a substrate; a plurality of light-emitting units disposed on the substrate, each light-emitting unit including a set of RGB-LED chips; a plastic layer provided on the light-emitting units; and a virtual isolating region provided between the light-emitting units, the virtual isolating region including a black light-absorbing layer provided on the substrate. The present disclosure makes use of the black light-absorbing layer to absorb light which may cause interference among the light-emitting units. By providing the virtual isolating region and an isolating trough, and utilizing the difference of refractive index of packaging plastic and refractive index of air, light emitted by the light-emitting units can be reflected to reduce the influence of adjacent light-emitting units. A black isolating-frame is filled in the isolating trough to minimize the interference among the light-emitting units.

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; dry-etching portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; causing nitrogen atoms (N) to react with the partial region of the n-type clad layer exposed; and forming an n-side electrode on the partial region of the n-type clad layer that the nitrogen atoms are caused to react with.

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; dry-etching portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; causing nitrogen atoms (N) to react with the partial region of the n-type clad layer exposed; and forming an n-side electrode on the partial region of the n-type clad layer that the nitrogen atoms are caused to react with.

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; and forming an n-side electrode on the partial region of the n-type clad layer exposed. The removing includes first dry-etching performed by using both a reactive gas and an inert gas and second dry-etching performed after the first dry-etching by using a reactive gas.

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; and forming an n-side electrode on the partial region of the n-type clad layer exposed. The removing includes first dry-etching performed by using both a reactive gas and an inert gas and second dry-etching performed after the first dry-etching by using a reactive gas.

A micro-LED module is disclosed. The micro-LED module includes: a micro-LED including a plurality of LED cells, each of which includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a submount substrate mounted with the micro-LED; a plurality of electrode pads formed on the micro-LED cells; a plurality of electrodes formed corresponding to the plurality of electrode pads on the submount substrate; a plurality of connection members through which the plurality of electrode pads are connected to the corresponding plurality of electrodes; and a gap fill layer formed in the gap between the micro-LED and the submount substrate and having a bonding strength to the micro-LED and the submount substrate.

A micro-LED module is disclosed. The micro-LED module includes: a micro-LED including a plurality of LED cells, each of which includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a submount substrate mounted with the micro-LED; a plurality of electrode pads formed on the micro-LED cells; a plurality of electrodes formed corresponding to the plurality of electrode pads on the submount substrate; a plurality of connection members through which the plurality of electrode pads are connected to the corresponding plurality of electrodes; and a gap fill layer formed in the gap between the micro-LED and the submount substrate and having a bonding strength to the micro-LED and the submount substrate.

Disclosed in an embodiment is a semiconductor device comprising: a substrate; first and second semiconductor layers arranged on the substrate and having different conductive types; a third semiconductor layer arranged between the first semiconductor layer and the second semiconductor layer; a first electrode arranged on the first semiconductor layer so as to be electrically connected to the first semiconductor layer; a second electrode arranged on the second semiconductor layer so as to be electrically connected to the second semiconductor layer; and a first insulating layer arranged, between the first electrode and the second electrode, on the exposed first, second and third semiconductor layers, wherein a first end part, close to the second electrode, among both end parts of the first electrode, and/or a second end part, which is both end parts of the second electrode, has an electric field dispersion part.

LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.