The present invention discloses a light emitting element and a fabrication method thereof. The light emitting element includes: an anode electrode, a hole transport layer, a light emitting layer, an electron transport layer and a cathode electrode, all of the light emitting units are divided into a plurality of light emitting sets, each light emitting set includes at least two light emitting units and the light emitting units in a same light emitting set share a same electron transport layer and a same cathode electrode. In the technical solutions of the present invention, all of the light emitting units in a same light emitting set share a same electron transport layer and a same cathode electrode, thus effectively reducing the number of the cathode electrodes.

The present invention discloses a light emitting element and a fabrication method thereof. The light emitting element includes: an anode electrode, a hole transport layer, a light emitting layer, an electron transport layer and a cathode electrode, all of the light emitting units are divided into a plurality of light emitting sets, each light emitting set includes at least two light emitting units and the light emitting units in a same light emitting set share a same electron transport layer and a same cathode electrode. In the technical solutions of the present invention, all of the light emitting units in a same light emitting set share a same electron transport layer and a same cathode electrode, thus effectively reducing the number of the cathode electrodes.

A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 m.

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 m.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

The invention relates to an optoelectronic light-emitting device (1), including: at least one light-emitting diode (40) having an emitting surface (44) adapted to emit so-called excitation luminous radiation; and a photoluminescent material (31) that coats the emitting surface (44), the photoluminescent material containing photoluminescent particles adapted to convert said excitation luminous radiation through the emitting surface (44) at least in part into so-called photoluminescence luminous radiation. The optoelectronic device includes at least one photodiode (50) adjacent the light-emitting diode (40) having a receiving surface (54) coated by the photoluminescent material (31) and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material (31) through the receiving surface.

A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip.