A light-emitting device package includes a first lead frame; a second lead frame separated from the first lead frame in a first direction; a package body having a cavity exposing a portion of the second lead frame. Further, the cavity includes an inclined inner surface inclining with respect to an upper surface of the second lead frame; a light-emitting diode disposed on the exposed portion of the second lead frame; a hole in the inclined inner surface of the cavity and exposing a portion of the first lead frame; a protection device disposed in the hole and on the exposed portion of the first lead frame; a first wire having a first end connected to the light-emitting diode, and a second end connected to the first lead frame; a second wire having a first end connected to the light-emitting diode, and a second end connected to the second lead frame; and a third wire having a first end connected to the protection device, and a second end connected to the exposed portion of the second lead frame.

An optoelectronic component includes an optoelectronic semiconductor chip that generates primary radiation during intended operation of the semiconductor chip, which primary radiation is coupled out via an emission side of the semiconductor chip, an optical element on the emission side and including a plurality of transmission fields arranged laterally side by side, wherein each transmission field is individually and independently electrically controllable, the transmission fields each include an electrochromic material, the transmission fields are such that, by electrically driving a transmission field, the transmittance of the electrochromic material for a radiation coming from the direction of the semiconductor chip during operation is changed and transmittance of the optical element in the region of the respective transmission field is changed for the respective radiation.

An optoelectronic component includes an optoelectronic semiconductor chip that generates primary radiation during intended operation of the semiconductor chip, which primary radiation is coupled out via an emission side of the semiconductor chip, an optical element on the emission side and including a plurality of transmission fields arranged laterally side by side, wherein each transmission field is individually and independently electrically controllable, the transmission fields each include an electrochromic material, the transmission fields are such that, by electrically driving a transmission field, the transmittance of the electrochromic material for a radiation coming from the direction of the semiconductor chip during operation is changed and transmittance of the optical element in the region of the respective transmission field is changed for the respective radiation.

The present invention relates to a process for producing one or more electrical contacts on a component, comprising (a) applying one or more coatings on the component, where at least one of the coatings is a coating of an electrically conductive material, (b) applying a self-passivating metal or semiconductor and/or a dielectric material on the coated component, (c) structuring the passivating coating by laser treatment or etching, (d) contacting the structured coating with an electroplating bath, (e) etching the regions not covered with the galvanically deposited metal.

The present invention relates to a process for producing one or more electrical contacts on a component, comprising (a) applying one or more coatings on the component, where at least one of the coatings is a coating of an electrically conductive material, (b) applying a self-passivating metal or semiconductor and/or a dielectric material on the coated component, (c) structuring the passivating coating by laser treatment or etching, (d) contacting the structured coating with an electroplating bath, (e) etching the regions not covered with the galvanically deposited metal.

Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

A light source device includes a mounted substrate which is a multi-layered substrate, a semiconductor light-emitting device which emits a laser beam, a wavelength-converting member which radiates fluorescence by being irradiated with the laser beam emitted from the semiconductor light-emitting device as an excitation light, a state detection circuit, an electric field effect type transistor which adjusts an electric current amount applied to the semiconductor light-emitting device upon receipt of an output from the state detection circuit, and an external connecting member, and the semiconductor light-emitting device, the state detection circuit, the transistor, and the external connecting member are mounted on the single mounted substrate.

A light source device includes a mounted substrate which is a multi-layered substrate, a semiconductor light-emitting device which emits a laser beam, a wavelength-converting member which radiates fluorescence by being irradiated with the laser beam emitted from the semiconductor light-emitting device as an excitation light, a state detection circuit, an electric field effect type transistor which adjusts an electric current amount applied to the semiconductor light-emitting device upon receipt of an output from the state detection circuit, and an external connecting member, and the semiconductor light-emitting device, the state detection circuit, the transistor, and the external connecting member are mounted on the single mounted substrate.

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence with a bottom side, a bottom coating located on the bottom side and an electrode layer located on an underside of the bottom coating facing away from the semiconductor layer sequence, wherein the bottom coating has a thickness gradient and at least one ridge line at which the bottom coating is thickest, wherein the electrode layer extends over the at least one ridge line such that a contact side of the electrode layer facing away from the semiconductor layer sequence follows the bottom coating true to shape, and wherein an electrical and mechanical contact plane of the contact side parallel to the bottom side is defined by the at least one ridge line.