The present invention relates to a vehicle lamp using a semiconductor light emitting device, and the vehicle lamp includes a light source unit to emit light. The light source unit includes a substrate having a reflective film, a semiconductor light emitting device coupled to the substrate, an insulating layer stacked on the reflective film to surround the semiconductor light emitting device, a first electrode and a second electrode disposed on an upper surface of the insulating layer, and light-transmitting connection electrodes extending from the first and second electrodes, respectively, electrically connected to the semiconductor light-emitting device, and covering an upper surface of the semiconductor light-emitting device.

Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).

The present invention is intended to provide a light-emitting diode (LED) structure which can be easily transferred onto another substrate, a transfer assembly whose adhesive strength with LED structures can be maintained in spite of repetitive transfer processes, LED structures and a transfer assembly for selectively transferring the LED structures, and a transfer method using the same.

The present invention is intended to provide a light-emitting diode (LED) structure which can be easily transferred onto another substrate, a transfer assembly whose adhesive strength with LED structures can be maintained in spite of repetitive transfer processes, LED structures and a transfer assembly for selectively transferring the LED structures, and a transfer method using the same.

The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.

The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.

A light-emitting device includes a light-emitting element and a light-transmissive member containing a phosphor, particles, and a matrix, the phosphor and the particles being dispersed in the matrix, the particles including at least one of surface-treated particles, particles coexisting with a dispersing agent, and surface-treated particles coexisting with a dispersing agent, the particles being dispersed as aggregates, the particles having an average particle diameter in a range of 1 nm to 8 nm, a content of the particles falling within a range of 0.01 parts by mass to less than 5 parts by mass relative to 100 parts by mass of the matrix, a content of the phosphor falling within a range of 100 parts by mass to 300 parts by mass relative to 100 parts by mass of the matrix.

A light-emitting device includes a light-emitting element and a light-transmissive member containing a phosphor, particles, and a matrix, the phosphor and the particles being dispersed in the matrix, the particles including at least one of surface-treated particles, particles coexisting with a dispersing agent, and surface-treated particles coexisting with a dispersing agent, the particles being dispersed as aggregates, the particles having an average particle diameter in a range of 1 nm to 8 nm, a content of the particles falling within a range of 0.01 parts by mass to less than 5 parts by mass relative to 100 parts by mass of the matrix, a content of the phosphor falling within a range of 100 parts by mass to 300 parts by mass relative to 100 parts by mass of the matrix.

The present disclosure provides a flexible light emitting diode (LED) device and a method for manufacturing the same. The method includes providing a p-type silicon wafer as a base, and then performing an exposure and development process to form a patterned layer including a plurality of p-type silicon microcolumns on the base; filling a plurality of gaps among the p-type silicon microcolumns with a soft polymer resin to form a compound layer; sequentially forming an n-type doped metal oxide layer and a first metal electrode layer on the compound layer; and removing the base, forming a second metal electrode layer, and then entirely shifting a whole body including these layers onto a flexible substrate.

The present disclosure provides a flexible light emitting diode (LED) device and a method for manufacturing the same. The method includes providing a p-type silicon wafer as a base, and then performing an exposure and development process to form a patterned layer including a plurality of p-type silicon microcolumns on the base; filling a plurality of gaps among the p-type silicon microcolumns with a soft polymer resin to form a compound layer; sequentially forming an n-type doped metal oxide layer and a first metal electrode layer on the compound layer; and removing the base, forming a second metal electrode layer, and then entirely shifting a whole body including these layers onto a flexible substrate.