A gallium nitride-based semiconductor device includes an amorphous substrate, a conductive alignment layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the conductive alignment layer, and an auxiliary electrode layer in contact with the conductive alignment layer. The auxiliary electrode layer is arranged around a periphery portion of the conductive alignment layer.

A gallium nitride-based semiconductor device includes an amorphous substrate, a conductive alignment layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the conductive alignment layer, and an auxiliary electrode layer in contact with the conductive alignment layer. The auxiliary electrode layer is arranged around a periphery portion of the conductive alignment layer.

A light emitting device includes first and second electrodes disposed on a substrate; an insulating layer disposed on the substrate and including a groove extending in a first direction intersecting with the first and the second electrodes, and first and second contact portions that expose areas of the first and the second electrodes; light emitting elements disposed in the groove between the first and the second electrodes, each including first and second ends electrically connected to the first and second electrodes, respectively; a first contact electrode electrically connected to the light emitting elements on the first ends, and electrically connected to the first electrode on the first contact portion; and a second contact electrode electrically connected to the light emitting elements on the second ends, and electrically connected to the second electrode on the second contact portion.

A light emitting device includes first and second electrodes disposed on a substrate; an insulating layer disposed on the substrate and including a groove extending in a first direction intersecting with the first and the second electrodes, and first and second contact portions that expose areas of the first and the second electrodes; light emitting elements disposed in the groove between the first and the second electrodes, each including first and second ends electrically connected to the first and second electrodes, respectively; a first contact electrode electrically connected to the light emitting elements on the first ends, and electrically connected to the first electrode on the first contact portion; and a second contact electrode electrically connected to the light emitting elements on the second ends, and electrically connected to the second electrode on the second contact portion.

A high-level power source line of a display device has a resistance value per unit length that is greater from a second end portion side toward a first end portion side in at least a portion of a section ranging from the first end portion connected to a first power source bus line to the second end portion in a side opposite to the first end portion. Accordingly, variation in luminance of each pixel is suppressed.

Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

A display device and a method of manufacturing the same are provided. The display device includes a first alignment electrode and a second alignment electrode spaced apart from each other, a light emitting element between the first alignment electrode and the second alignment electrode, a first auxiliary electrode at a first side of the light emitting element in a plan view, and separated from the first alignment electrode, and a second auxiliary electrode at a second side of the light emitting element in a plan view, and separated from the second alignment electrode, wherein an alignment signal is configured to be applied to the first alignment electrode, and wherein a first auxiliary signal of a phase that is different from a phase of the alignment signal is configured to be applied to the first auxiliary electrode.

A display device and a method of manufacturing the same are provided. The display device includes a first alignment electrode and a second alignment electrode spaced apart from each other, a light emitting element between the first alignment electrode and the second alignment electrode, a first auxiliary electrode at a first side of the light emitting element in a plan view, and separated from the first alignment electrode, and a second auxiliary electrode at a second side of the light emitting element in a plan view, and separated from the second alignment electrode, wherein an alignment signal is configured to be applied to the first alignment electrode, and wherein a first auxiliary signal of a phase that is different from a phase of the alignment signal is configured to be applied to the first auxiliary electrode.

An electronic device includes: a first substrate; a silicon semiconductor layer disposed on the first substrate; a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.

A light-emitting element includes: an anode; a hole transport layer of a p-type semiconductor; a n-type semiconductor layer containing a Group 13 element; a light-emitting layer containing quantum dots; an electron transport layer; and a cathode, arranged in this order.