The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 ?m to 50 ?m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

A light source and a light emitting module thereof are provided. The light source drives and controls the light emitting module containing numerous light emitters by linear constant current drivers and a switch, and all the light emitters can be turned on or turned off simultaneously by utilizing a manner of full-balance series-parallel conversion, which result in the superior light uniformity and even the low flicker requirement can be met.

A light source and a light emitting module thereof are provided. The light source drives and controls the light emitting module containing numerous light emitters by linear constant current drivers and a switch, and all the light emitters can be turned on or turned off simultaneously by utilizing a manner of full-balance series-parallel conversion, which result in the superior light uniformity and even the low flicker requirement can be met.

A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15 and not more than 50.

A semiconductor light-emitting diode (LED) package is provided and includes a semiconductor LED chip having a surface on which a first electrode and a second electrode are formed; a first solder bump formed on the first electrode and a second solder bump formed on the second electrode, the first solder bump and the second solder bump protruding from the surface of the semiconductor LED chip; and a resin layer having a bottom portion that surrounds a first side surface of the first solder bump and a second side surface of the second solder bump and covers the surface of the semiconductor LED chip.

A semiconductor light-emitting diode (LED) package is provided and includes a semiconductor LED chip having a surface on which a first electrode and a second electrode are formed; a first solder bump formed on the first electrode and a second solder bump formed on the second electrode, the first solder bump and the second solder bump protruding from the surface of the semiconductor LED chip; and a resin layer having a bottom portion that surrounds a first side surface of the first solder bump and a second side surface of the second solder bump and covers the surface of the semiconductor LED chip.

A light-emitting package includes a light-emitting structure having a first surface and a second surface opposite to the first surface. The light-emitting package further includes an electrode layer disposed on the first surface and an insulating layer disposed on the light-emitting structure and the electrode layer. The light-emitting package additionally includes an interconnection conductive layer penetrating the insulating layer and connected to the electrode layer and a reflective layer disposed between the insulating layer and the interconnection conductive layer. The reflective layer reflects light generated from the light-emitting structure in a direction toward the second surface.

A light-emitting package includes a light-emitting structure having a first surface and a second surface opposite to the first surface. The light-emitting package further includes an electrode layer disposed on the first surface and an insulating layer disposed on the light-emitting structure and the electrode layer. The light-emitting package additionally includes an interconnection conductive layer penetrating the insulating layer and connected to the electrode layer and a reflective layer disposed between the insulating layer and the interconnection conductive layer. The reflective layer reflects light generated from the light-emitting structure in a direction toward the second surface.