Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

A light-emitting diode (LED) chip includes a substrate, a light-emitting component, an electrical static discharge (ESD) protection component, and a conductive layer. The light-emitting component is disposed on the substrate and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer, in which the first quantum well layer is disposed between the first and second semiconductor layers. The ESD protection component is disposed on the substrate and includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer, in which the second quantum well layer is disposed between the third and the fourth semiconductor layers. The first and the fourth semiconductor layers are electrically connected with each other through the conductive layer, and the second and the third semiconductor layers are electrically isolated from each other before packaging the LED chip.

Disclosed in an embodiment is a light emitting device comprising: a light-emitting structure having a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer; a first contact layer disposed under the light-emitting structure; a reflective layer disposed under the first contact layer; a first electrode layer including a capping layer disposed under the reflective layer; a second electrode layer electrically connected with the first semiconductor layer; a protective layer disposed at the outer peripheral portion between the capping layer and the light-emitting structure; a barrier layer at an outer side of the reflective layer and made of a metal different from that of the reflective layer; and a support member disposed under the capping layer.a

A UV LED package disclosed herein includes a submount, a UV LED chip adapted to emit UV light at 200 nm to 400 nm, and a package body mounted with the submount. The submount includes a heat dissipating substrate, a first reflective electrode film and a second reflective electrode film separated from each other by an electrode separation gap on the heat dissipating substrate, a first flip-chip bonding pad and a first wire bonding pad disposed on the first reflective electrode film, and a second flip-chip bonding pad and a second wire bonding pad disposed on the second reflective electrode film. The UV LED chip includes a first conductive electrode pad corresponding to the first flip-chip bonding pad and a second conductive electrode pad corresponding to the second flip-chip bonding pad. The UV LED chip is flip-chip bonded to the submount through a first bonding bump interposed between the first flip-chip bonding pad and the first conductive electrode pad and a second bonding bump interposed between the second flip-chip bonding pad and the second conductive electrode pad. The package body includes a first metal body electrically connected to the first wire bonding pad through a first bonding wire and a second metal body separated from the first metal body by an insulating material and electrically connected to the second wire bonding pad through a second bonding wire.

A UV LED package disclosed herein includes a submount, a UV LED chip adapted to emit UV light at 200 nm to 400 nm, and a package body mounted with the submount. The submount includes a heat dissipating substrate, a first reflective electrode film and a second reflective electrode film separated from each other by an electrode separation gap on the heat dissipating substrate, a first flip-chip bonding pad and a first wire bonding pad disposed on the first reflective electrode film, and a second flip-chip bonding pad and a second wire bonding pad disposed on the second reflective electrode film. The UV LED chip includes a first conductive electrode pad corresponding to the first flip-chip bonding pad and a second conductive electrode pad corresponding to the second flip-chip bonding pad. The UV LED chip is flip-chip bonded to the submount through a first bonding bump interposed between the first flip-chip bonding pad and the first conductive electrode pad and a second bonding bump interposed between the second flip-chip bonding pad and the second conductive electrode pad. The package body includes a first metal body electrically connected to the first wire bonding pad through a first bonding wire and a second metal body separated from the first metal body by an insulating material and electrically connected to the second wire bonding pad through a second bonding wire.

The light-emitting device includes a base plate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulation layer, a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer, and a conductor line. The light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication.

The light-emitting device includes a base plate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulation layer, a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer, and a conductor line. The light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication.

A method for manufacturing a light emitting device includes: providing a wafer that includes, successively from an upper face side, an electrode structure that includes multilayer wiring, a semiconductor layer electrically connected to the electrode structure, and a growth substrate; bonding the wafer to a support substrate; exposing the semiconductor layer by removing the growth substrate from the wafer; separating the semiconductor layer into a plurality of light emitting elements, which comprises forming grooves on a semiconductor layer side surface of the wafer; and forming a phosphor layer having protrusions and recesses at a surface thereof such that the phosphor layer covers surfaces of the light emitting elements, which comprises: forming a coating film on surfaces of the light emitting elements by applying a slurry comprising phosphor particles contained in a solvent, and vaporizing the solvent in the coating film to form the phosphor layer.

In order to be more compact and thin, this light emitting device includes LED elements embedded in a resin molded body such that light emitting units are exposed on a lateral surface of the resin molded body and positive electrodes and negative electrodes are exposed on a back surface which is perpendicular to the lateral surface of the resin molded body.