An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members. The bonding pads are disposed on the substrate. The light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

An electronic device is provided, including a substrate, a plurality of bonding pads, and a plurality of light emitting members. The bonding pads are disposed on the substrate. The light emitting members are disposed on the bonding pads. The light emitting members include a first pair of adjacent light-emitting members, a second pair of adjacent light-emitting members, and a third pair of adjacent light-emitting members. The first pair of adjacent light-emitting members, the second pair of adjacent light-emitting members, and the third pair of adjacent light-emitting members are arranged along the first direction in sequence. The first pair of adjacent light-emitting members has a first pitch, the second pair of adjacent light-emitting members has a second pitch, and the third pair of adjacent light-emitting members has a third pitch. The third pitch is greater than the second pitch, and the second pitch is greater than the first pitch.

A multi-LED structure comprises a first LED and a separate second LED disposed on a common multi-LED native substrate. The LEDs each comprise a common first layer having a cantilever portion and a base portion and a common second layer having a light-emitting emission portion disposed only over the base portion. An LED electrode electrically connects the first LED to the second LED. The cantilever portion extends in a direction different from the base portion or a length of the cantilever portion is less than a distance between the emission portions of the first and second LEDs.

A multi-LED structure comprises a first LED and a separate second LED disposed on a common multi-LED native substrate. The LEDs each comprise a common first layer having a cantilever portion and a base portion and a common second layer having a light-emitting emission portion disposed only over the base portion. An LED electrode electrically connects the first LED to the second LED. The cantilever portion extends in a direction different from the base portion or a length of the cantilever portion is less than a distance between the emission portions of the first and second LEDs.

In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

A display device includes a pixel in a display area. The pixel may include a first electrode and a second electrode spaced from each other; a first insulating pattern on the first electrode, the first insulating pattern protruding to an outside of the first electrode while having a width greater than that of the first electrode; a second insulating pattern on the second electrode, the second insulating pattern protruding to an outside of the second electrode while having a width greater than that of the second electrode; a light emitting element arranged between the first insulating pattern and the second insulating pattern, the light emitting element including a first end and a second end; a third insulating pattern on a portion of the light emitting element to expose the first end and the second end of the light emitting element; and a first contact electrode on the light emitting element.

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate in an emission region in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, and a shaping optical system that shapes a luminous flux emitted from the light emission unit, in which a lens closest to the light emission unit in the shaping optical system is a cylindrical lens having positive power in the lateral direction, a front major plane of the cylindrical lens is parallel to the light emission unit and a generatrix direction of the cylindrical lens is parallel to the longitudinal direction, and the following conditional equation (1) is satisfied in a case where a distance from the light emission unit to a light incident surface of the cylindrical lens is D, a distance from the light incident surface to the front major plane of the cylindrical lens is HA, and a focal length of the cylindrical lens is f,

D<f−HA  (1).

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate in an emission region in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, and a shaping optical system that shapes a luminous flux emitted from the light emission unit, in which a lens closest to the light emission unit in the shaping optical system is a cylindrical lens having positive power in the lateral direction, a front major plane of the cylindrical lens is parallel to the light emission unit and a generatrix direction of the cylindrical lens is parallel to the longitudinal direction, and the following conditional equation (1) is satisfied in a case where a distance from the light emission unit to a light incident surface of the cylindrical lens is D, a distance from the light incident surface to the front major plane of the cylindrical lens is HA, and a focal length of the cylindrical lens is f,

D<f−HA  (1).