H01L33/36

Light emitting module and method of manufacturing the same

A light emitting module includes: a plurality of light emitting elements each having a primary light emitting surface and a lateral surface; a plurality of wavelength conversion members arranged respectively on the primary light emitting surfaces of the plurality of light emitting elements; and a lightguide plate having a first primary surface and a second primary surface and arranged continuously on the plurality of wavelength conversion members so that the second primary surface faces the plurality of wavelength conversion members, wherein the lightguide plate includes a plurality of recessed portions located on the second primary surface, and a lateral surface of at least one of the plurality of wavelength conversion members is partially in contact with an inner lateral surface of at least one of the plurality of recessed portions.

Light emitting module and method of manufacturing the same

A light emitting module includes: a plurality of light emitting elements each having a primary light emitting surface and a lateral surface; a plurality of wavelength conversion members arranged respectively on the primary light emitting surfaces of the plurality of light emitting elements; and a lightguide plate having a first primary surface and a second primary surface and arranged continuously on the plurality of wavelength conversion members so that the second primary surface faces the plurality of wavelength conversion members, wherein the lightguide plate includes a plurality of recessed portions located on the second primary surface, and a lateral surface of at least one of the plurality of wavelength conversion members is partially in contact with an inner lateral surface of at least one of the plurality of recessed portions.

Micro light-emitting diode display panel, micro light-emitting diode display device, and fingerprint identification method

A micro light-emitting diode (LED) display panel is provided. The micro LED display panel includes a substrate and a driving layer. The driving layer is disposed on the substrate. The driving layer includes a micro LED and a photo sensor. When the micro LED emits light to a finger of a user, the photo sensor generates a sensing signal.

Micro light-emitting diode display panel, micro light-emitting diode display device, and fingerprint identification method

A micro light-emitting diode (LED) display panel is provided. The micro LED display panel includes a substrate and a driving layer. The driving layer is disposed on the substrate. The driving layer includes a micro LED and a photo sensor. When the micro LED emits light to a finger of a user, the photo sensor generates a sensing signal.

Semiconductor device and manufacturing method therefor
11508879 · 2022-11-22 · ·

A small-sized semiconductor device with a structure for stopping and keeping uncured resin or adhesive in a desired region, which is manufactured by employing a process of curing uncured resin or adhesive that is made to wet and spread on a board, is provided. The semiconductor device includes a board mounted with a semiconductor element and includes metal patterns formed on the board. The metal patterns include a first metal pattern, a second metal pattern, and a through electrode. The first metal pattern and the second metal pattern are provided separately from each other on the board. The through electrode is disposed between the first metal pattern and the second metal pattern and penetrates through the board in the thickness direction.

Semiconductor device and manufacturing method therefor
11508879 · 2022-11-22 · ·

A small-sized semiconductor device with a structure for stopping and keeping uncured resin or adhesive in a desired region, which is manufactured by employing a process of curing uncured resin or adhesive that is made to wet and spread on a board, is provided. The semiconductor device includes a board mounted with a semiconductor element and includes metal patterns formed on the board. The metal patterns include a first metal pattern, a second metal pattern, and a through electrode. The first metal pattern and the second metal pattern are provided separately from each other on the board. The through electrode is disposed between the first metal pattern and the second metal pattern and penetrates through the board in the thickness direction.

OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC ARRANGEMENT
20230054120 · 2023-02-23 · ·

An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC ARRANGEMENT
20230054120 · 2023-02-23 · ·

An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

MICRO LIGHT EMITTING DIODE (LED) DISPLAY DEVICE

The present disclosure relates to a micro light emitting diode (LED) display device including a substrate having a plurality of thin film transistors thereon; a plurality of micro light emitting devices (LEDs) on an upper surface of the substrate, the micro LEDs each having a protecting film provided with a first contact hole to expose a portion of an upper surface of a corresponding micro LED; at least one insulating layer covering the micro LED, the insulating layer provided with a second contact hole to expose a portion of the upper surface of the corresponding micro LED; and a connection electrode in the first contact hole and the second contact hole configured to transfer signals to the micro LED, wherein the first contact hole is larger than the second contact hole.

Light-emitting device and light-emitting device structure
11502225 · 2022-11-15 · ·

A light-emitting device includes an epitaxial structure, and first and second electrodes. The epitaxial structure has a first surface and a second surface opposite to each other, first dislocation density regions and second dislocation density regions. The first dislocation density regions and the second dislocation density regions are alternately disposed between the first surface and the second surface. A dislocation density of each first dislocation density region is lower than a dislocation density of each second dislocation density region and a quantity of the first dislocation density regions is at least ten. The epitaxial structure further includes a light-emitting layer, a first-type semiconductor layer and a second-type semiconductor layer disposed on two opposite sides of the light-emitting layer. The first electrode and the second electrode are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively. A light-emitting device structure adopting the light-emitting device is provided.