An optoelectronic arrangement is specified, comprising a moulded body (2) having a base surface (2b), a first pixel group (41) with a multiplicity of pixels (1) assigned thereto, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10), a multiplicity of separating structures (3) arranged between the pixels (1), and at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact location (52), which is freely accessible at the base surface (2b), wherein the pixels (1) of the first pixel group (41) are arranged alongside one another at the top surface (2a), the first semiconductor regions (11) and/or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), a first contact structure (51, 52, 53) is assigned one-to-one to the first pixel group (41), and the first semiconductor regions (11) of the pixels (1) of the first pixel group (41) are electrically conductively connected to one another by means of the first contact plane (51) and are electrically contactable by means of the first contact location (52).

An optoelectronic arrangement is specified, comprising a moulded body (2) having a base surface (2b), a first pixel group (41) with a multiplicity of pixels (1) assigned thereto, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10), a multiplicity of separating structures (3) arranged between the pixels (1), and at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact location (52), which is freely accessible at the base surface (2b), wherein the pixels (1) of the first pixel group (41) are arranged alongside one another at the top surface (2a), the first semiconductor regions (11) and/or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), a first contact structure (51, 52, 53) is assigned one-to-one to the first pixel group (41), and the first semiconductor regions (11) of the pixels (1) of the first pixel group (41) are electrically conductively connected to one another by means of the first contact plane (51) and are electrically contactable by means of the first contact location (52).

A light emitting device including a light emitting unit and a phosphor resin layer is provided. The light emitting unit has a top surface and a bottom surface opposite to each other. Each of the light emitting units includes two electrodes. The two electrodes are disposed on the bottom surface. The phosphor resin layer is disposed on the top surface of the light emitting unit. One side of the phosphor resin layer has a mark. One of the two electrodes is closer to the mark with respect to the other one of the two electrodes.

A light emitting device including a light emitting unit and a phosphor resin layer is provided. The light emitting unit has a top surface and a bottom surface opposite to each other. Each of the light emitting units includes two electrodes. The two electrodes are disposed on the bottom surface. The phosphor resin layer is disposed on the top surface of the light emitting unit. One side of the phosphor resin layer has a mark. One of the two electrodes is closer to the mark with respect to the other one of the two electrodes.

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; dry-etching portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; causing nitrogen atoms (N) to react with the partial region of the n-type clad layer exposed; and forming an n-side electrode on the partial region of the n-type clad layer that the nitrogen atoms are caused to react with.

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; dry-etching portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; causing nitrogen atoms (N) to react with the partial region of the n-type clad layer exposed; and forming an n-side electrode on the partial region of the n-type clad layer that the nitrogen atoms are caused to react with.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.

Disclosed in one embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; a second electrode electrically connected with the second conductive semiconductor layer; a reflective layer arranged on the second electrode; and a capping layer arranged on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly arranged on the reflective layer and the first layer includes Ti.