A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.

Disclosed are a light-emitting device package, a manufacturing method therefor, and a vehicle lamp and a backlight unit including the same. The light-emitting device package includes: a light-emitting chip having electrode pads positioned at a lower part thereof; a wavelength conversion unit for covering at least an upper surface and lateral surfaces of the light-emitting chip; and a reflective part which covers the lateral surfaces of the light-emitting chip. Accordingly, the light-emitting device package can be miniaturized and a separate substrate for forming a lens is not required.

Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300 to 500 nm distant from the upper surfaces of the semiconductor structures.

A display device including pixels respectively containing a plurality of subpixels, the display device comprises: a light emitting diode (LED) array including a plurality of LED cells, the plurality of LED cells provided in the plurality of subpixels, the plurality of LED cells configured to emit light having substantially the same wavelength, each of the plurality of LED cells having a first surface and a second surface; thin-film transistor (TFT) circuitry including a plurality of TFT cells, each of the plurality of TFT cells disposed on the first surface of an LED cell of the plurality of LED cells and including source and drain regions and a gate electrode disposed between the source and drain regions; a wavelength conversion pattern disposed on the second surface of an LED cell of the plurality of LED cells, the wavelength conversion pattern including a composite of a quantum dot and/or a polymer, the quantum dot configured to emit different colors of light from colors of light emitted from other quantum dots of other wavelength conversion patterns; and a light blocking wall disposed between two of the plurality of subpixels including the plurality of LED cells and between wavelength conversion patterns to separate the plurality of subpixels.

A display device including pixels respectively containing a plurality of subpixels, the display device comprises: a light emitting diode (LED) array including a plurality of LED cells, the plurality of LED cells provided in the plurality of subpixels, the plurality of LED cells configured to emit light having substantially the same wavelength, each of the plurality of LED cells having a first surface and a second surface; thin-film transistor (TFT) circuitry including a plurality of TFT cells, each of the plurality of TFT cells disposed on the first surface of an LED cell of the plurality of LED cells and including source and drain regions and a gate electrode disposed between the source and drain regions; a wavelength conversion pattern disposed on the second surface of an LED cell of the plurality of LED cells, the wavelength conversion pattern including a composite of a quantum dot and/or a polymer, the quantum dot configured to emit different colors of light from colors of light emitted from other quantum dots of other wavelength conversion patterns; and a light blocking wall disposed between two of the plurality of subpixels including the plurality of LED cells and between wavelength conversion patterns to separate the plurality of subpixels.