The present disclosure provides a display module and a method for manufacturing the same, a display device and a wearable device. The display module includes a display screen, at least one pressure sensing electrode, and a touch screen. The display screen includes a first and a second electrode on opposite sides of a display layer, and an encapsulation layer on the second electrode. The at least one pressure sensing electrode is disposed on the encapsulation layer and opposite to the second electrode. The touch screen is disposed on the at least one pressure sensing electrode and is insulated from the at least one pressure sensing electrode.

The present disclosure provides a display module and a method for manufacturing the same, a display device and a wearable device. The display module includes a display screen, at least one pressure sensing electrode, and a touch screen. The display screen includes a first and a second electrode on opposite sides of a display layer, and an encapsulation layer on the second electrode. The at least one pressure sensing electrode is disposed on the encapsulation layer and opposite to the second electrode. The touch screen is disposed on the at least one pressure sensing electrode and is insulated from the at least one pressure sensing electrode.

A light emitting device disclosed in the embodiment includes: a body including a recess having an open upper portion; a plurality of electrodes disposed at a bottom of the recess; and a light emitting diode disposed on at least one of the plurality of electrodes, wherein a side surface of the recess is inclined at a first angle with respect to an optical axis of the light emitting diode, and a value obtained by multiplying a value of a minimum distance between the light emitting diode and the side surface of the recess by a tangent value for the first angle ranges from 0.21 to 0.42.

A light emitting device disclosed in the embodiment includes: a body including a recess having an open upper portion; a plurality of electrodes disposed at a bottom of the recess; and a light emitting diode disposed on at least one of the plurality of electrodes, wherein a side surface of the recess is inclined at a first angle with respect to an optical axis of the light emitting diode, and a value obtained by multiplying a value of a minimum distance between the light emitting diode and the side surface of the recess by a tangent value for the first angle ranges from 0.21 to 0.42.

An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

A light emitting module according to an embodiment comprises: a first support member having a first opening part and a second opening part; a second support member disposed in the first opening part in the first support member; a third support member disposed in the second opening part in the first support member; a first lead electrode disposed above the second support member; a second lead electrode disposed on the first support member and/or above the second support member; a light emitting chip disposed above the second support member and electrically connected to the first and second lead electrodes; a control component disposed above the third support member; and a conductive layer disposed underneath the first, second and third support members, wherein the first support member comprises a resin material, the second support material comprises a ceramic material and the third support member comprises a metal material.

A light emitting module according to an embodiment comprises: a first support member having a first opening part and a second opening part; a second support member disposed in the first opening part in the first support member; a third support member disposed in the second opening part in the first support member; a first lead electrode disposed above the second support member; a second lead electrode disposed on the first support member and/or above the second support member; a light emitting chip disposed above the second support member and electrically connected to the first and second lead electrodes; a control component disposed above the third support member; and a conductive layer disposed underneath the first, second and third support members, wherein the first support member comprises a resin material, the second support material comprises a ceramic material and the third support member comprises a metal material.

In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.