In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.

The present invention relates to a process for producing one or more electrical contacts on a component, comprising (a) applying one or more coatings on the component, where at least one of the coatings is a coating of an electrically conductive material, (b) applying a self-passivating metal or semiconductor and/or a dielectric material on the coated component, (c) structuring the passivating coating by laser treatment or etching, (d) contacting the structured coating with an electroplating bath, (e) etching the regions not covered with the galvanically deposited metal.

The present invention relates to a process for producing one or more electrical contacts on a component, comprising (a) applying one or more coatings on the component, where at least one of the coatings is a coating of an electrically conductive material, (b) applying a self-passivating metal or semiconductor and/or a dielectric material on the coated component, (c) structuring the passivating coating by laser treatment or etching, (d) contacting the structured coating with an electroplating bath, (e) etching the regions not covered with the galvanically deposited metal.

A light-emitting device includes: a light-emitting element that includes a light-transmissive substrate having a first surface and a second surface opposite to the first surface, a semiconductor layer on the first surface, and positive and negative electrodes on the semiconductor layer; a mounting board that includes wiring and a base supporting the wiring; one or more light-reflective pieces; and one or more light-absorbing pieces. The light-emitting element is flip-chip mounted on or above the wiring. The light-reflective layer and the light-absorbing layer cover part of the second surface and are layered in this order from the second surface.

A light-emitting device includes: a light-emitting element that includes a light-transmissive substrate having a first surface and a second surface opposite to the first surface, a semiconductor layer on the first surface, and positive and negative electrodes on the semiconductor layer; a mounting board that includes wiring and a base supporting the wiring; one or more light-reflective pieces; and one or more light-absorbing pieces. The light-emitting element is flip-chip mounted on or above the wiring. The light-reflective layer and the light-absorbing layer cover part of the second surface and are layered in this order from the second surface.

A video wall module includes a plurality of light emitting diode chips, each including first contact electrodes and second contact electrodes arranged at a contact side, wherein the light emitting diode chips are arranged at a top side of a multilayer circuit board, and the contact electrodes electrically conductively connect to a first metallization layer arranged at the top side of the circuit board.

A video wall module includes a plurality of light emitting diode chips, each including first contact electrodes and second contact electrodes arranged at a contact side, wherein the light emitting diode chips are arranged at a top side of a multilayer circuit board, and the contact electrodes electrically conductively connect to a first metallization layer arranged at the top side of the circuit board.

A displaying apparatus including: a panel substrate; a plurality of light emitting devices arranged on the panel substrate; and at least one connection tip disposed on one surface of each of the light emitting devices. Each of the light emitting devices includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first and second conductivity type semiconductor layers; and first and second electrode pads disposed on the light emitting structure.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.