An electronic device is provided. The electronic device includes: a substrate, a first light-emitting element, and a second light-emitting element. The first light-emitting element is disposed on the substrate and configured to emit a first color light under a first current density when the substrate provides a first current to the first light-emitting element. The second light-emitting element is disposed on the substrate and configured to emit a second color light under a second current density when the substrate provides a second current to the second light-emitting element. The first current is equal to the second current, and the first current density is different from the second current density.

One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.

One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.

A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

A light-emitting device assembly includes: a light-emitting device 11 including a light-emitting layer, a first electrode 31, and a second electrode 32; and a first connecting portion 41 and a second connecting portion 42 provided on a base 40, in which the first connecting portion 41 and the second connecting portion 42 are separated from each other by a separation portion 43, the base 40 being exposed from the separation portion 43, a wide portion 44 is provided on a first connecting portion side of the separation portion 43, the first electrode 31 includes a first portion 31A and a second portion 31B, the second portion 31B of the first electrode is connected to the first connecting portion 41, the first portion 31A of the first electrode extends from the second portion 31B of the first electrode, and an orthographic projection image of the first portion 31A of the first electrode with respect to the base 40 and the wide portion 44 of the separation portion 43 overlap with each other at least in part.

A light-emitting device assembly includes: a light-emitting device 11 including a light-emitting layer, a first electrode 31, and a second electrode 32; and a first connecting portion 41 and a second connecting portion 42 provided on a base 40, in which the first connecting portion 41 and the second connecting portion 42 are separated from each other by a separation portion 43, the base 40 being exposed from the separation portion 43, a wide portion 44 is provided on a first connecting portion side of the separation portion 43, the first electrode 31 includes a first portion 31A and a second portion 31B, the second portion 31B of the first electrode is connected to the first connecting portion 41, the first portion 31A of the first electrode extends from the second portion 31B of the first electrode, and an orthographic projection image of the first portion 31A of the first electrode with respect to the base 40 and the wide portion 44 of the separation portion 43 overlap with each other at least in part.

An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.

An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.