A micro lighting device includes a substrate, an isolation layer formed on the substrate, a side-emission micro device, and a switching device. The side-emission micro device includes a first electrode, a second electrode and an emission surface. The side-emission micro device is disposed in a way so that the emission surface is perpendicular or parallel to the surface of the substrate. The switching device includes a first end, a second end coupled to the first electrode, and a control end.

The invention provides a manufacturing method of micro LED display panel and micro LED display panel. In the manufacturing method, an elastic conductive layer is formed on the upper pixel electrode on the package substrate. When the package substrate and the driving substrate are assembled, the upper pixel electrode and the upper electrode of the micro LED are electrically connected through the elastic conductive layer, and the elasticity of the elastic conductive layer is utilized to fill the height difference between the individual micro LEDs, avoid poor connection between the upper pixel electrode and the upper electrode of the micro LED, and improve the assembling effect of the micro LED display panel and the process yield of the micro LED display panel.

The invention provides a manufacturing method of micro LED display panel and micro LED display panel. In the manufacturing method, an elastic conductive layer is formed on the upper pixel electrode on the package substrate. When the package substrate and the driving substrate are assembled, the upper pixel electrode and the upper electrode of the micro LED are electrically connected through the elastic conductive layer, and the elasticity of the elastic conductive layer is utilized to fill the height difference between the individual micro LEDs, avoid poor connection between the upper pixel electrode and the upper electrode of the micro LED, and improve the assembling effect of the micro LED display panel and the process yield of the micro LED display panel.

An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.

Provided is an optical semiconductor apparatus including an optical semiconductor device; a light-permeable buffer layer that contains a cured high-hardness silicone resin, that has a thickness ranging from 1 m to 300 m, and that covers at least part of a light-emitting surface of the optical semiconductor device; and a flexible sealing layer containing a cured flexible silicone resin that has a lower hardness than the light-permeable buffer layer, and that covers the optical semiconductor device and the light-permeable buffer layer. The optical semiconductor apparatus has superior heat resistance and UV resistance and is significantly prevents the breakage of a wire electrically connected to the optical semiconductor device.

Provided is an optical semiconductor apparatus including an optical semiconductor device; a light-permeable buffer layer that contains a cured high-hardness silicone resin, that has a thickness ranging from 1 m to 300 m, and that covers at least part of a light-emitting surface of the optical semiconductor device; and a flexible sealing layer containing a cured flexible silicone resin that has a lower hardness than the light-permeable buffer layer, and that covers the optical semiconductor device and the light-permeable buffer layer. The optical semiconductor apparatus has superior heat resistance and UV resistance and is significantly prevents the breakage of a wire electrically connected to the optical semiconductor device.

The present disclosure relates to a display device, and more particularly, to a display device including a plurality of pixels on a base layer and a first light-emitting element and a second light-emitting element, which are provided on a first pixel of the pixels. Here, each of the first and second light-emitting elements includes a first surface and a second surface opposite to the first surface, the first surface of the first light-emitting element faces the base layer, and the second surface of the second light-emitting element faces the base layer.

The present disclosure relates to a display device, and more particularly, to a display device including a plurality of pixels on a base layer and a first light-emitting element and a second light-emitting element, which are provided on a first pixel of the pixels. Here, each of the first and second light-emitting elements includes a first surface and a second surface opposite to the first surface, the first surface of the first light-emitting element faces the base layer, and the second surface of the second light-emitting element faces the base layer.

An LED display includes a wafer-level substrate, a first adhesive layer, a plurality of first light-emitting assemblies, and a first conductive structure. The wafer-level substrate includes a plurality of control circuits, each of which has a conductive contact. The first adhesive layer is disposed on the wafer-level substrate. Each first light-emitting assembly includes a plurality of first LED structures disposed on the first adhesive layer. The first conductive structure is electrically connected between the corresponding first LED structure and the control circuit. Thereby, each first light-emitting assembly including a plurality of first LED structures and a wafer-level substrate having a plurality of control circuits can be connected to each other through a first adhesive layer.

An LED display includes a wafer-level substrate, a first adhesive layer, a plurality of first light-emitting assemblies, and a first conductive structure. The wafer-level substrate includes a plurality of control circuits, each of which has a conductive contact. The first adhesive layer is disposed on the wafer-level substrate. Each first light-emitting assembly includes a plurality of first LED structures disposed on the first adhesive layer. The first conductive structure is electrically connected between the corresponding first LED structure and the control circuit. Thereby, each first light-emitting assembly including a plurality of first LED structures and a wafer-level substrate having a plurality of control circuits can be connected to each other through a first adhesive layer.